FET 355 Search Results
FET 355 Datasheets Context Search
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Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device |
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NE850R599A NE850R599A CODE-99 | |
cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
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NE850R599A NE850R599A CODE-99 cd 1619 CP AUDIO cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725 | |
NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
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NE850R599A NE850R599A CODE-99 NEC k 3654 gl 7445 nec k 813 nec 8725 gm 8562 5942 A 7601 0549 | |
rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
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REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 | |
NE850R5Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device |
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NE850R5 NE850R599 CODE-99 | |
63000-000Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device |
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NE850R5 E850R599 CODE-99 63000-000 | |
Contextual Info: B U R R - B R O W N <i [ INA111 ] High Speed FET-lnput INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • FET INPUT: lB = 20pA max The INA111 is a high speed, FET-input instrumenta tion amplifier offering excellent performance. • HIGH SPEED: Ts = 4|is G = 100, 0.01% |
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INA111 INA111 106dB 17313b5 | |
HIP4081 pwm controller
Abstract: AN9325 hip4081 HIP4080 HIP4081 amplifier circuit diagram class D stepper motor hip4081 HIP4081A HIP4081IB HIP4081IP
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HIP4081 HIP4081 95VDC 1000pF HIP4081 pwm controller AN9325 HIP4080 HIP4081 amplifier circuit diagram class D stepper motor hip4081 HIP4081A HIP4081IB HIP4081IP | |
Contextual Info: HIP4081 Semiconductor 80V/2.5A Peak, High Frequency Full Bridge FET Driver November 1996 Description Features Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic |
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HIP4081 HIP4081 1000pF | |
Contextual Info: OPA137 OPA2137 0PA4137 B U R R -B R O W N LOW COST FET-INPUT OPERATIONAL AMPLIFIERS MicroAmplifier" Series FEATURES DESCRIPTION • FET INPUT: lB = 5pA • LOW OFFSET VOLTAGE: 1.5mV OPA137 series FET-input operational amplifiers are designed for low cost and miniature applications. In addition to small |
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OPA137 OPA2137 OPA4137 OT-23-5, OT-23-5 | |
Contextual Info: MOS FET Relays G3VM-355J/JR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose high On-resistance Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP package in the 350-V load voltage series. |
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G3VM-355J/JR G3VM-355JR X302-E-1 | |
G3VM-355J
Abstract: G3VM-355JR
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G3VM-355J/JR G3VM-355JR X302-E-1 G3VM-355J G3VM-355JR | |
G3VM-355J
Abstract: G3VM-355JR
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G3VM-355J/JR G3VM-355JR X302-E-1 G3VM-355J G3VM-355JR | |
5 pin relay NO NC
Abstract: G3VM-355J
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G3VM-355J G3VM-355J 5 pin relay NO NC | |
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OmronContextual Info: G3VM-355CR/FR MOS FET Relays SPST-NO + SPST-NC MOS FET Relay in a Single DIP Package. • SPST-NO/SPST-NC models now included in the 350-V load voltage series. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples |
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G3VM-355CR/FR K251-E1-01 Omron | |
G3VM-355JR
Abstract: Omron
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G3VM-355JR K255-E1-01 G3VM-355JR Omron | |
Contextual Info: MOS FET Relays G3VM-355JR New MOS FET Relay with Both SPST-NO and SPSTNC Contacts Incorporated in a Single SOP Package • SPST-NO/SPST-NC models with an 8-pin SOP package now available in the 350-V load voltage series. • Continuous load current of 120 mA. |
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G3VM-355JR G3VM-355JR JB301-E3-01 | |
HIP4081 pwm controller
Abstract: AN9325 schematic diagram h bridge ups HIP4081 stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES
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HIP4081 HIP4081 95VDC 1000pF 1-800-4-HARRIS HIP4081 pwm controller AN9325 schematic diagram h bridge ups stepper motor hip4081 HIP4080 HIP4081A HIP4081IB HIP4081IP HARRIS SEMICONDUCTOR APPLICATION NOTES | |
Contextual Info: Preliminary Datasheet RJE0605JPD REJ03G1803-0100 Rev.1.00 Apr 01, 2010 Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of |
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RJE0605JPD REJ03G1803-0100 limi9044 | |
G3VM-355C
Abstract: G3VM-355CR G3VM-355F G3VM-355FR
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G3VM-355C/CR/F/FR G3VM-355CR X302-E-1 G3VM-355C G3VM-355CR G3VM-355F G3VM-355FR | |
Contextual Info: MOS FET Relays G3VM-355C/CR/F/FR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • • • • • SPST-NO/SPST-NC models included in the 350-V load series. Continuous load current of 120 mA. |
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G3VM-355C/CR/F/FR G3VM-355CR X302-E-1 | |
G3VM-355C
Abstract: G3VM-355CR G3VM-355F G3VM-355FR
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G3VM-355C/CR/F/FR G3VM-355CR X302-E-1 G3VM-355C G3VM-355CR G3VM-355F G3VM-355FR | |
Contextual Info: MOS FET Relays G3VM-355CR/FR MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. • • • • SPST-NO/SPST-NC models included in the 350-V load series. Continuous load current of 120 mA. Dielectric strength of 2,500 Vrms between I/O. |
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G3VM-355CR/FR G3VM-355CR G3VM-355FR X302-E-1c | |
Contextual Info: S H IP 4 0 8 1 M A S S 'S 80V/2.5A Peak, High Frequency Full Bridge FET Driver January 1995 Description Features Independently Drives 4 N-Channel FET In Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP |
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HIP4081 95VDC 1000pF 00b017b |