FET 600V 20A Search Results

date code, Renesas MOS FET

Abstract: PRSS0005ZB-A
Contextual Info: Preliminary Datasheet RJQ6020DPM 600V - 20A - MOS FET High Speed Power Switching R07DS0649EJ0100 Rev.1.00 Jan 23, 2012 Features • High speed switching • Low on-state voltage • Built in fast recovery diode in one package Outline RENESAS Package code: PRSS0005ZB-A

Contextual Info: FR0OUOT ÂTÂIO' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35G SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

RJK60S5

Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPN 600V - 20A - MOS FET High Speed Power Switching R07DS0952EJ0100 Rev.1.00 Nov 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

RJK60S5

Abstract: RJK60S5DPN-00 RJK60s5dpn
Contextual Info: Preliminary Datasheet RJK60S5DPN 600V - 20A - MOS FET High Speed Power Switching R07DS0952EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

p623f

Abstract: 600V1200V p623
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

RJL60S5DPP-E0

Abstract: RJL60S5 R07DS0819EJ0100
Contextual Info: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET  Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C

RJK60s5dpp

Abstract: rjk60s5
Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

RJL60S5

Contextual Info: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)

fet 600V 20A

Abstract: mosfet 600V 20A SDF20N60 1d20a
Contextual Info: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

RJL60S5

Abstract: RJL60S5DPE
Contextual Info: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)

Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

H-Bridge

Abstract: 600V1200V p623f
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

RJK60S5

Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

RJK60S5

Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

RJL60S5

Contextual Info: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)