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Rochester Electronics LLC RJK60S5DPE-00-J3 MOSFET N-CH 600V 20A 4LDPAK
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DigiKey	RJK60S5DPE-00-J3	Bulk			20	1 - 10 - 100 $15.15 1000 $15.15 10000 $15.15	Buy Now
Rochester Electronics LLC RJK60S5DPK-M0-T0 MOSFET N-CH 600V 20A TO3PSG
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DigiKey	RJK60S5DPK-M0-T0	Tube			20	1 - 10 - 100 $15.15 1000 $15.15 10000 $15.15	Buy Now
Rochester Electronics LLC RJK60S5DPN-00-T2 N-CHANNEL POWER MOSFET
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DigiKey	RJK60S5DPN-00-T2	Bulk			20	1 - 10 - 100 $15.15 1000 $15.15 10000 $15.15	Buy Now
Rochester Electronics LLC RJK60S5DPP-E0-T2 MOSFET N-CH 600V 20A TO220FP
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DigiKey	RJK60S5DPP-E0-T2	Tube			20	1 - 10 - 100 $15.15 1000 $15.15 10000 $15.15	Buy Now
Renesas Electronics Corporation RJK60S5DPN-00#T2 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube
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Verical	RJK60S5DPN-00#T2		138,686		25	1 - 10 - 100 $17.3 1000 $15.475 10000 $14.575	Buy Now
Rochester Electronics	RJK60S5DPN-00#T2		138,686		1	1 - 10 - 100 $13.84 1000 $12.38 10000 $11.66	Buy Now

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RJK60S5 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
RJK60S5DPE-00#J3		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A LDPAK		Original	PDF		8
RJK60S5DPK-M0#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-3PSG		Original	PDF		8
RJK60S5DPN-E0#T2		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220AB		Original	PDF		8
RJK60S5DPP-E0#T2		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220FP		Original	PDF		8
RJK60S5DPQ-E0#T2		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-247		Original	PDF		8

RJK60S5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPQ-E0 R07DS0734EJ0100 PRSS0003ZE-A O-247)	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPP-E0 R07DS0641EJ0100 PRSS0003AG-A O-220FP)	PDF
RJK60S5 Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPE R07DS0639EJ0200 PRSS0004AE-B RJK60S5	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B	PDF
RJK60S5 Abstract: PRSS0004ZH-A RJK60 RJK60S5DPK-M0 RJK60S rjk60s5dpk Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0245EJ0100 Rev.1.00 Jan 19, 2011 Features • Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	RJK60S5DPK-M0 R07DS0245EJ0100 PRSS0004ZH-A Stora9044 RJK60S5 PRSS0004ZH-A RJK60 RJK60S5DPK-M0 RJK60S rjk60s5dpk	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPQ-E0 R07DS0734EJ0100 PRSS0003ZE-A O-247)	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPP-E0 R07DS0641EJ0200 PRSS0003AG-A O-220FP)	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0500 Rev.5.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPK-M0 R07DS0245EJ0500 PRSS0004ZH-A	PDF
RJK60s5dpp Abstract: rjk60s5 Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPP-E0 R07DS0641EJ0300 PRSS0003AG-A O-220FP) RJK60s5dpp rjk60s5	PDF
RJK60S5 Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A RJK60S5	PDF
Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	RJK60S5DPP-E0 R07DS0641EJ0100 PRSS0003AG-A O-220FP)	PDF
RJK60S5 Abstract: RJK60S5DPK-M0 Contextual Info: Preliminary Datasheet RJK60S5DPK-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0245EJ0300 Rev.3.00 Feb 06, 2012 Features • Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	RJK60S5DPK-M0 R07DS0245EJ0300 PRSS0004ZH-A RJK60S5 RJK60S5DPK-M0	PDF

RJK60S5 Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPQ-E0 R07DS0734EJ0200 PRSS0003ZE-A O-247) RJK60S5	PDF
RJK60S5 Abstract: RJK60S5DPN-00 RJK60s5dpn Contextual Info: Preliminary Datasheet RJK60S5DPN 600V - 20A - MOS FET High Speed Power Switching R07DS0952EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	RJK60S5DPN R07DS0952EJ0200 PRSS0004AC-A O-220AB) RJK60S5 RJK60S5DPN-00 RJK60s5dpn	PDF
RJK60S5 Abstract: r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0 Contextual Info: High-voltage SJ-MOSFETs New SJ-MOSFETs with Very Low RDS on and Ultra-low Qgd A new line-up of high-voltage SJ-MOSFETs that combine very low RDS(on) and ultra-low Qgd enable switching power supply and motor drive designs that are optimized for both the highest efficiency and compact form	Original	O-220, O-247, 0212/100/in-house/LAH/JE RJK60S5 r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0	PDF