FET FT 30 GHZ Search Results

FE42-0001

Abstract: SVC6310
Contextual Info: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

AWS01

Abstract: aft-186
Contextual Info: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

fet ft 25 GHZ

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic

fet amplifier schematic

Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Contextual Info: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application

fet ft 25 GHZ

Abstract: fet ft 30 GHZ
Contextual Info: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

Contextual Info: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description

fet ft 20 GHZ

Abstract: SMG50 fet probe service manual
Contextual Info: 1.5 GHz Active Probe TAP1500 Data Sheet Easy to Use Connects Directly to DPO7000 and DPO/MSO4000 Series Oscilloscopes Using the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe

Prospects for a BiCFET III-V HBT Process

Abstract: kopin
Contextual Info: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

siemens gaas fet

Abstract: TMS 1600 marking S221
Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,

JS8892-AS

Abstract: k-band amplifier fet ft 30 GHZ
Contextual Info: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GidB= 6*5 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM

AVANTEK transistor

Abstract: ATF-13136-TR1
Contextual Info: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

Contextual Info: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib

MWT1171HP

Contextual Info: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD

ATF-26100

Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
Contextual Info: ¥hn% ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET H E W LE T T ft "HÆ PACKARD Features • • • Chip Outline Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB

Contextual Info: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package