MWT1171HP Search Results

Contextual Info: MWT1171HP Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)9 V(BR)GSS (V)6 I(D) Max. (A)1.3 P(D) Max. (W)4.0 Maximum Operating Temp (øC)150 I(DSS) Min. (A)400m I(DSS) Max. (A)920m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.290m

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

MWT1171HP

Contextual Info: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD

MWT1171HP

Abstract: 1171H
Contextual Info: M e M wT -11 16 GHz HIGH POWER GaAs FET ? MicroWave Technology 4268 Solar way Fremont, 94538 510-651-670q f a x s io -651-22Q8 FEATURES »-751 t-73-l ca • 1 WATT POWER OUTPUT AT 12 GHZ • HIGH ASSOCIATED GAIN 343 • 0.3 MICRON REFRACTORY METAL/GOLD GATE