FET MARK Search Results

Pch MOS FET

Abstract: US6M2 TUMT6
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.

GP145

Abstract: MGF0915A PO36 MGF0915 fet GP145
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

093.216

Abstract: 2sk2974 093.941 transistor 2sk2974
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB

QS6M4

Abstract: TSMT6 Pch MOS FET m04 fet
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.

MGF0914A

Abstract: fet 4901 0648
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

uhf 1kw amplifier

Abstract: MGF0916A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

MGF0913A

Abstract: 1709-1
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

FC654601

Abstract: FET MARKING CODE FET MARKING
Contextual Info: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter

R2J20604NP

Abstract: Nippon capacitors
Contextual Info: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0300 Rev.3.00 Feb 09, 2009 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

QFN56 Datasheet

Abstract: QFN56 R2J20602NP intel drMOS compliant ic tab 810 Nippon capacitors
Contextual Info: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0300 Rev.3.00 Jun 30, 2008 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

P-HVQFN56-8x8-0

Abstract: dc-27 QFN56 Datasheet QFN56 intel drMOS compliant
Contextual Info: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Nippon capacitors

Contextual Info: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0100 Preliminary Rev.1.00 Nov 30, 2007 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

QFN56 Datasheet

Abstract: QFN56 R2J20602NP QFN56 footprint Nippon capacitors
Contextual Info: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0200 Preliminary Rev.2.00 Nov 30, 2007 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20609NP R07DS0666EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

045H8

Abstract: qfn56 package
Contextual Info: Preliminary Datasheet R2J20609NP R07DS0666EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

smd z13

Abstract: of bt 1696 Z12 SMD
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

bt 1696

Abstract: transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

transistors mos

Contextual Info: US5U3 Transistors 2.5V Drive Nch+SBD MOS FET US5U3 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOS FET and schottky barrier diode

Contextual Info: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

QFN56 tray package

Abstract: R2J20602NP ic tab 810 QFN56 footprint QFN56 Datasheet QFN56 Nippon capacitors R2J20602NP#G3
Contextual Info: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0400 Rev.4.00 Feb 09, 2009 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

QFN56 Datasheet

Abstract: QFN56 R2J20604NP Nippon capacitors
Contextual Info: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0200 Rev.2.00 Jun 30, 2008 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this