TUMT6 Search Results

Contextual Info: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications

Contextual Info: RTL035N03FRA RTL035N03 Transistors 2.5V Drive Nch MOSFET AEC-Q101 Qualified RTL035N03FRA RTL035N03 zDimensions Unit : mm zStructure Silicon N-channel MOSFET TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6).

us6k

Contextual Info: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 2.0 0.85Max. (4) (3) 0.77 1pin mark 0.2 (2) (1) 0~0.1 0.17 0.3 Abbreviated symbol : K02 zApplications Switching zPackaging specifications zInner circuit

RZL035P01

Abstract: TUMT6
Contextual Info: 1.5V Drive Pch MOSFET RZL035P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YB zApplication Switching zPackaging specifications

TUMT6

Abstract: Rl86 n-channel 2.5v mosfet Z diode RTL035N03
Contextual Info: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM

RTL030P02

Contextual Info: RTL030P02 Transistors 2.5V Drive Pch MOSFET RTL030P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. (90mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WN

Contextual Info: US6X3 Transistors Low frequency amplifier 12V, 3A US6X3 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. 250mV At lc=1.5A / lB=30mA ROHM : TUMT6 zEquivalent circuit

TUMT6

Contextual Info: US6X5 Transistors Low frequency amplifier 12V, 2A US6X5 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA ROHM : TUMT6 zAbsolute maximum ratings (Ta=25°C)

Contextual Info: US6T4 Transistors Low frequency amplifier US6T4 zDimensions Unit : mm 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) : max. −250mV At IC=−1.5A / IB=−30mA ROHM : TUMT6 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C)

Contextual Info: US6X7 Transistors General purpose amplification 12V, 1.5A US6X7 (2) (6) (1) 0.2 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 0.15Max. 標印略記号 : X07 ROHM : TUMT6 zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit Symbol Limits Unit Collector-base voltage

IB201

Contextual Info: US6X7 Transistors General purpose amplification 12V, 1.5A US6X7 (6) (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV

Contextual Info: US6X8 Transistors General purpose amplification 30V, 1A US6X8 (6) (1) 0.2 1.7 0.77 0~0.1 0.17 ROHM : TUMT6 Symbol Limits Unit VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A ICP 2 PC 400 Collector current Power dissipation

Contextual Info: US6X5 Transistors Low frequency amplifier US6X5 6 (1) 0.2 1.7 0~0.1 0.17 1) A collector current is large. 2) VCE(sat) =<180mV At IC = 1A / IB = 50mA ROHM : TUMT6 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage

Contextual Info: US6J2 Transistors Small switching −20V, −1A US6J2 TUMT6 2.0±0.1 0.85MAX 0.77±0.05 (6) (5) (4) (1) (2) (3) 2.1±0.1 1.7±0.1 0.2 0.3 +0.1 −0.05 0.2MAX zExternal dimensions (Unit : mm) 0~0.1 0.2 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6

Contextual Info: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)

Contextual Info: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)

Contextual Info: RAL035P01 Data Sheet 1.5V Drive Pch MOSFET RAL035P01  Structure Silicon P-channel MOSFET  Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SB  Application

TUMT6

Abstract: TSQ03125-US6J2 TSZ22111
Contextual Info: TYPE PRODUCTS TUMT6 1.TYPE PAGE US6J2 1/4 US6J2 2.STRUCTURE 3.APPLICATIONS SILICON P-CHANNEL MOS FET SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2. 》 ・・・ -20V DRAIN-SOURCE VOLTAGE VDSS GATE-SOURCE VOLTAGE

Contextual Info: US6X3 Transistors Low frequency amplifier 12V, 3A US6X3 Dimensions (Unit : mm) 0.2Max. Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) : max. 250mV At lc=1.5A / lB=30mA ROHM : TUMT6 Equivalent circuit Absolute maximum ratings (Ta=25°C)

Contextual Info: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD

Contextual Info: RUL035N02 Nch 20V 3.5A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 43mW ID 3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).

Contextual Info: RRL035P03 Pch -30V -3.5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6).

US6H23

Abstract: transistor h23
Contextual Info: US6H23 Transistors Dual digital transistors US6H23 zDimensions Unit : mm TUMT6 0.2Max. zFeatures In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits.

Contextual Info: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04