FET PREAMP Search Results

EUDYNA

Abstract: FSX017X/001 FSX017X
Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high

FSX017X/001

Abstract: bonder Fsx017LG fujitsu gaas fet
Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high

BF862

Abstract: BP317 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in

BF997

Abstract: Philips MKP dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF997

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF862

Abstract: marking code 2Ap transistor 2Ap nxp marking code MCD809 MCD815 10102F fet bf862 nxp 102 MCD814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

AD8066

Abstract: AD8065 ad8065 photodiode C8 SOT23-5 G.2 SOT23-5 C8 SOT23 c.8 sot23-5
Contextual Info: PRELIMINARY TECHNICAL DATA a High Performance High-Speed FAST FET TM OP AMP Preliminary Technical Data AD8065/AD8066 CONNECTION DIAGRAMS TOP VIEW FEATURES FET Input Amplifier Single, Dual Low Cost High Speed 150MHz, –3 dB Bandwidth (G = +1) 180V/ µ s Slew Rate

bf862

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

BF862

Abstract: marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

M5238AL

Abstract: riaa M5221 m5238 12 pin stereo amplifier
Contextual Info: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in

M5238L

Abstract: M5238 m5238p M5221 integrated circuit M5238
Contextual Info: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in

MUSES01

Abstract: muses riaa eq MUSES01D
Contextual Info: MUSES01 High Quality Audio , J-FET Input, Dual Operational Amplifier The MUSES01 is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and professional audio applications with advanced circuitry and layout, unique material and assembled technology by

M5238L

Abstract: m5238 M5238P M5238AL M5221 riaa phono preamplifier Gv40dB RS-100K
Contextual Info: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in

M5238

Abstract: M5238A
Contextual Info: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in

Contextual Info: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise

AD8067ART-EBZ

Abstract: sot-23 JFET
Contextual Info: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise

NJM8920

Abstract: MUSES8920
Contextual Info: MUSES8920 High Quality Audio J-FET Input Dual Operational Amplifier • GENERAL DESCRIPTION The MUSES8920 is a high quality Audio J-FET input dual operational amplifier. This is a mass production model of MUSES Series. By inheriting MUSES Technology we pursued in the "MUSES series", the

transimpedance amplifier 7.5 GHz

Abstract: 105-120V ad8067art fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-R2 AD8067ART-REEL AD8067ART-REEL7
Contextual Info: High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/ s slew rate Low noise 6.6 nV/√Hz

Contextual Info: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 CONNECTION DIAGRAM TOP VIEW FEATURES FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise

MUSES8920

Abstract: MUSE8920 MUSES8920D MUSES8920E NJM8920 muses riaa
Contextual Info: MUSES8920 High Quality Audio J-FET Input Dual Operational Amplifier • GENERAL DESCRIPTION The MUSES8920 is a high quality Audio J-FET input dual operational amplifier. This is a mass production model of MUSES Series. By inheriting MUSES Technology we pursued in the "MUSES series", the

2 anode igbt inverter circuit diagram

Abstract: IGBT control circuit for inverter power inverter circuit diagram circuit diagram of refrigerator pc929 pwm mosfet dc ac inverter ac dC converter circuit diagram 12v inverter circuit inverter circuit diagram 12V DC converter circuit diagram
Contextual Info: Application Note Photocoupler Motor Drive Circuit PC923X/PC924X DC + VCC O1 interface Anode + VCC1=12V + VCC2=12V O2 Cathode TTL, MCU GND U V W MOS-FET or IGBT LOAD Recommended Mode Bipolar Transistor PC942 MOS-FET / IGBT DC(-) PC923X or PC924X or PC928 or PC929

Contextual Info: FET Input Analog Front End with ADC Driver ADA4350 Data Sheet FEATURES GENERAL DESCRIPTION Low noise, low input bias current FET input amplifier Very low input bias current: ±0.25 pA typical at 25°C Low input voltage noise 92 nV/√Hz typical at 10 Hz at 5 V

LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-

AD8066

Abstract: AD8515 jfet discrete differential transistor AD8033 AD8065 High Speed Amplifiers XFC-B AD8620 ultrasound transducer transformer AD628
Contextual Info: ADI-4789 Amplifiers 6/3/02 5:53 PM Page 1 Amplifiers July 2002 T H E IN THIS ISSUE Low Cost FET Input Amplifiers Low Cost FastFETs . . . . . . . . . . . . . . . . . . . . . 2 hen it came to using FET-input amplifiers, it used to be that the inexpensive ones didn’t have