MINDSPEED M02015
Abstract: No abstract text available
Text: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. M02015 Low Power CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps
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M02015
M02015
02015-DSH-001-D
MINDSPEED M02015
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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XU1009-BD
Abstract: RF Transistor Selection 26TX0555 26TX
Text: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain
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27-Jul-07
MIL-STD-883
XU1009-BD
XU1009-BD-000V
XU1009-BD-EV1
XU1009
XU1009-BD
RF Transistor Selection
26TX0555
26TX
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INCOMING RAW MATERIAL INSPECTION chart
Abstract: INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING RAW MATERIAL flowchart LINEAR TECHNOLOGY mark code INCOMING MATERIAL FLOW PROCESS INCOMING RAW MATERIAL aql incoming inspection mil-std-883 2015 Gold Ball Bond Shear
Text: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology BIPOLAR PROCESS TO-92 Linear Technology Carsem Maylasia Linear Technology
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MIL-STD-883
INCOMING RAW MATERIAL INSPECTION chart
INCOMING RAW MATERIAL INSPECTION form
INCOMING RAW MATERIAL INSPECTION
INCOMING RAW MATERIAL INSPECTION method
INCOMING RAW MATERIAL flowchart
LINEAR TECHNOLOGY mark code
INCOMING MATERIAL FLOW PROCESS
INCOMING RAW MATERIAL
aql incoming inspection
mil-std-883 2015 Gold Ball Bond Shear
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dyna image
Abstract: cisco 2901 Vishay quality iso certificate 2901 cisco power supply cisco 891 smd 504 diod "dyna image" melf 777 ISO 9001 Sony oracle
Text: United States SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K [ X ] ANNUAL REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 [FEE REQUIRED] For the fiscal year ended December 31, 2000. Or [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF
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microwave MARCONI
Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm
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P35-5123-000-200
26GHz
23dBm
24GHz
P35-5123-000-200
20-26GHz
20-26GHz.
463/SM/02579/000
microwave MARCONI
H40P
NN12
MARCONI power
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INCOMING RAW MATERIAL INSPECTION
Abstract: INCOMING RAW MATERIAL INSPECTION method INCOMING Plate INSPECTION INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL LINEAR TECHNOLOGY mark code inspection sampling plan INCOMING RAW MATERIAL INSPECTION chart mil-std-883 2015 Gold Ball Bond Shear
Text: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology Corporation Bipolar Process 3 Lead SOT-223 Linear Technology Corp., Milpitas,
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OT-223
MIL-STD-883
INCOMING RAW MATERIAL INSPECTION
INCOMING RAW MATERIAL INSPECTION method
INCOMING Plate INSPECTION
INCOMING RAW MATERIAL INSPECTION form
INCOMING RAW MATERIAL flowchart
INCOMING RAW MATERIAL
LINEAR TECHNOLOGY mark code
inspection sampling plan
INCOMING RAW MATERIAL INSPECTION chart
mil-std-883 2015 Gold Ball Bond Shear
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H40P
Abstract: NN12 P35-5135-000-200
Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5135-000-200
28GHz
27dBm
P35-5135-000-200
28GHz
463/SM/02574/000
H40P
NN12
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Marconi
Abstract: MARCONI amplifier NN12 MARCONI power
Text: P35-5122-000-200 HEMT DRIVER AMPLIFIER 8.5 – 10.5GHz Features • • • 26dBm Output Power @6V 18dB Typical Gain Small 2.49 x 1.4mm Die Size Description The P35-5122-000-200 is a high performance 8.5-10.5GHz Gallium Arsenide driver amplifier. This product is
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P35-5122-000-200
26dBm
P35-5122-000-200
100mA,
170mA
462/SM/02348/000
Marconi
MARCONI amplifier
NN12
MARCONI power
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MARCONI amplifier
Abstract: 84-1LMI NN12 P35-5112-000-200
Text: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
MARCONI amplifier
84-1LMI
NN12
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TRANSISTOR R1002
Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing
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R1002
MIL-STD-883
TRANSISTOR R1002
R1002 TRANSISTOR
R1002
84-1LMI
XR1002
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ultrasonic probe ge
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes
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AN-1001
ultrasonic probe ge
GaAs MMIC ESD, Die Attach and Bonding Guidelines
GaAs FET chip
ultrasonic bond
AN-1001
Ultrasonic bubble
kulicke Soffa
nec microwave
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mcz 300 1bd
Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION
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128bit
Division/e-Busin125
mcz 300 1bd
SIT Static Induction Transistor
HgCdTe
philips igbt induction cooker
UJT pin identification
thyristor BT 161
Photo DIAC
rct Thyristor
dg23 transistor smd
power IGBT MOSFET GTO SCR diode
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84-1LMI
Abstract: NN12 P35-5112-000-200
Text: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
84-1LMI
NN12
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DM6030HK
Abstract: CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy
Text: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz
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13-Oct-06
CMM0016
076mm
CMM0016-BDis
CMM0016-BD
DM6030HK
CMM0016
CMM0016-BD
TS3332LD
tanaka gold wire
tanaka epoxy
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OC 74 germanium transistor
Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1020-BD
30-Jan-07
MIL-STD-883
XP1020-BD
XP1020-BD-000V
XP1020-BD-EV1
XP1020-BD
OC 74 germanium transistor
P1020
15MPA0566
DM6030HK
TS3332LD
XP1020-BD-000V
power transistor gaas
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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Untitled
Abstract: No abstract text available
Text: INDEX 963C CONNECTOR BONDER, 963-C CONNECTORS, 8 4 963C MECHANICAL ASSEMBLY FIXTURE, 963G COMB, 7 7 963L CONNECTOR BONDER, 963L CONNECTORS, 5 963R CONNECTORS, 6 8 A ACCESSORIES, 49, 54, 59, 76, 79, 81, 83 FEATURES, 49, 54, 76, 79, 81,83 ORDERING INFORMATION, 53, 58, 78, 80, 82, 84
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963-C
1A/13A)
12-TYPE)
221E/F)
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7416a
Abstract: chip bonding die DIE BONDER
Text: HSXAWAVS Power FET Chip Handling Instruction Hexawave, Inc. Die Bonding Procedure Equipments and Tools 1. Die Bonder 2. Tweezers Type SS 3. Thermometer Procedure I. Perform all steps in a forcing N2gas environment. 2 Control the heated stage temperature within 310
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M45A-HW-1513-S-F
27NC/30NC:
26YC/26NC/34NC:
7416a
chip bonding die
DIE BONDER
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz
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JS8850A-AS
15GHz
18GHz
18GHz
15GHz
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KU 607 VB
Abstract: la 1404 TE 1539
Text: T O S H IB A T7988,JT7988Y-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7988, JT7988Y-AS T7988, JT7988Y-AS CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR The T7988, JT7988Y-AS is a 1 chip microcomputer for 10digits + 2-digits electronic scientific calculator.
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T7988
JT7988Y-AS
T7988,
JT7988Y-AS
10digits
KU 607 VB
la 1404
TE 1539
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB
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28dBm
JS9P05-AS
38GHz
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION CHA6009 5. 0 - 6 . 0 G H z P O W E R A M P L I F I E R G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • 4W output power at 3dB gain compression 2.5W output power at 1dB gain compression 19dB small signal gain
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CHA6009
CHA6009-99A/00
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Untitled
Abstract: No abstract text available
Text: EBAlpha GaAs Flip Chip Mixer Diodes DM K2790-000, DMK2308-000 Features S ing le • Designed for High Volume Designs PC ■ High Frequency 2 0 -1 0 0 G Hz Nl m ■ Exceeds Environmental Requirements for M IC & Hybrid Applications A nti-P arallel ■ Designed for Low Junction Capacitance
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K2790-000,
DMK2308-000
2/99A
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