FET S6 Search Results

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

Contextual Info: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET

2SK1658

Abstract: TC236
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r

m8p smd

Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Contextual Info: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own

2SK1583

Abstract: IEI-1213 MEI-1202 TC-2297B
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1583 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­

Contextual Info: IN T E G R A T E D C IR C U IT S UC1714/5 UC2714/5 UC3714/5 UNITRODE Complementary Switch FET Drivers FEATURES • Single Input PWM and TTL Compatible • Auxiliary Output FET Driver, 0.5A Source/1 A Sink • High Current Power FET Driver, 1,0A Source/2A

sot-23 Marking M6

Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Contextual Info: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes

MGF1601

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use in S to X band am plifiers and oscillators. Th e herm etically sealed m etalceram ic package assures m inim um parasitic losses, and

Contextual Info: 2SK1819-01MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET _ ^ - F-V SERIES • Features Outline Drawings • Include fast recovery diode • High voltage • l ow driving power • Avalanche-proof ■ Applications • f /lotor controllers

Contextual Info: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620

transistor 431A

Abstract: transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a
Contextual Info: DATA SHEET PHN70308 7 N-channel 30/80 mi FET array O bjective specification File under Discrete sem iconductors, SC13b Philips Semiconductors 1998 Aug 14 PHILIPS Objective specification Philips Sem iconductors 7 N-channel 30/80 mQ FET array FEATURES • •

2sk20

Abstract: s630t 2SK2026
Contextual Info: 2SK2026-01 fS^SO FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

2sk955

Abstract: FLT5 2SK955 equivalent 8005i 5UTA
Contextual Info: 2SK955 " FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES •I Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS • DC-DC converters

RO6006

Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
Contextual Info: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: FET Input Analog Front End with ADC Driver ADA4350 Data Sheet FEATURES GENERAL DESCRIPTION Low noise, low input bias current FET input amplifier Very low input bias current: ±0.25 pA typical at 25°C Low input voltage noise 92 nV/√Hz typical at 10 Hz at 5 V

Contextual Info: 2SK957-MR FUJI PO W ER M O S-FET N CHANNEL SILICON POWER MOS-FET F -II SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • '/gss= ± 30V Guarantee ■ Applications

FET Transistor Guide

Abstract: boot loader code serial port msp430 2x7 segment led display 10 pin MSP430 pin diagram MHB14K-ND 2x7 lcd display 9 pin to 25-pin d-sub msp wiring MSP430F13xIPM MSP-TS430PM64 MSP430F1232IDW BSL .ZIP
Contextual Info: Texas Instruments MSP-FET430 Flash Emulation Tool FET User’s Guide Introduction Thank you for purchasing a Texas Instruments MSP-FET430 Flash Emulation Tool (FET) for our MSP430 ultralow power microcontroller. Please read and follow the Get Started Now! section below. This section will enable you to inventory your

diode S467

Contextual Info: 2SK906 F U JI POWER M O S-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES • Features ■Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power ■Applications • DC-DC converters • Motor controlers • General purpose power amplifier

2SK1658

Abstract: TC236
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be

Contextual Info: 2SK2251-01 F U JI POW ER M O S-FET N-CHAIMNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V S= ± 3 0 V Guarantee • Avalanche-proof

Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier

FS5I

Contextual Info: 2SK951-MR FUJI POWER MOS-FET n -: hannel silico n p o w e r m o s -fet F -II SERIES Outline Drawings • Features • High speed switching • l ow on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee

Contextual Info: 2 S K 1 1 6 - F U JI P O W E R M O S-FET 1 N-CHANNEL SILICON POWER MOS-FET F-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 . 9 — 6 . 4 20.4 ± 0 . 2 0 .8 0 3 ± 0 . 0 0 8