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    PTVA101K02EV Search Results

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    PTVA101K02EV Price and Stock

    MACOM PTVA101K02EV-V1-R0

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey () PTVA101K02EV-V1-R0 Reel 50 50
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    PTVA101K02EV-V1-R0 Cut Tape 44 1
    • 1 $823.97
    • 10 $735.727
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    PTVA101K02EV-V1-R0 Digi-Reel
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    Mouser Electronics PTVA101K02EV-V1-R0
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    Richardson RFPD PTVA101K02EV-V1-R0 1
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    Infineon Technologies AG PTVA101K02EVV1XWSA1

    RF MOSFET LDMOS H-36275-4
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    DigiKey PTVA101K02EVV1XWSA1 Tray
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    MACOM PTVA101K02EV-V1-R250

    RF MOSFET
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    DigiKey PTVA101K02EV-V1-R250 Reel
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    Mouser Electronics PTVA101K02EV-V1-R250
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    Richardson RFPD PTVA101K02EV-V1-R250 1
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    Infineon Technologies AG PTVA101K02EV P1

    Transistor RF FET NCH 105V 1030MHz to 1090MHz 4Pin H362754 Tray (Alt: SP001017752)
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    EBV Elektronik PTVA101K02EV P1 26 Weeks 1
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    Infineon Technologies AG LTN/PTVA101K02EV E8

    PTVA101K02EV Thermally Enhanced High Power RF LDMOS FET Evaluation Board (Alt: SP001108242)
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    EBV Elektronik LTN/PTVA101K02EV E8 26 Weeks 1
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    Find more PTVA101K02EV price and stock on Findchips.com

    PTVA101K02EV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    PTVA101K02EV-V1-R0
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF 351.82KB
    PTVA101K02EVV1R0XTMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF 447.64KB
    PTVA101K02EV-V1-R250
    		Cree/Wolfspeed Uncategorized - Miscellaneous - RF DEVELOPMENT TOOLS Original PDF 351.82KB
    PTVA101K02EVV1R250XTMA1
    		Infineon Technologies Uncategorized - Miscellaneous - RF DEVELOPMENT TOOLS Original PDF 447.64KB
    PTVA101K02EVV1XWSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 447.64KB

    PTVA101K02EV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PTVA101K02EV

    Abstract: 1030-1090MHz
    Contextual Info: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.


    Original     		PTVA101K02EV PTVA101K02EV H-36275-4 1030-1090MHz PDF

    RO6006

    Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
    Contextual Info: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST PDF

    Contextual Info: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.


    Original     		PTVA101K02EV PTVA101K02EV H-36275-4 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF