FET SMALL SIGNAL TRANSISTORS MOTOROLA Search Results

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

motorola bjt

Abstract: mrf9411 ic3 pin diagram MDC5000T1 MRF941 MARKING E5 SOT-143 application notes BJT transistor test
Contextual Info: MOTOROLA Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA MDC5000T1 SMALLBLOCK Low Voltage Bias Stabilizer • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors SILICON SMALLBLOCK INTEGRATED CIRCUIT

data sheet transistor 9018 NPN

Abstract: 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice
Contextual Info: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast

bs108

Abstract: MOTOROLA SEMICONDUCTOR FET FET TO-92 motorola power FET
Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high

mosfet class d

Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
Contextual Info: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

t2406 MOTOROLA

Abstract: MMFT2406T3 MMFT2406T1 SMD310 T2406
Contextual Info: MOTOROLA Order this document by MMFT2406T1/D SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET

MPF102 JFET

Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory

BS108

Contextual Info: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS BS108 N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

BS170 MOTOROLA

Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
Contextual Info: MOTOROLA Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

Granberg

Abstract: PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
Contextual Info: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0 . Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. W hat is better, if anything, with the power FETs if we can get a bipolar tran sisto r w ith an equal power rating for less th an half the price?

motorola sps transistor

Contextual Info: MOTOROLA Order this document by VN2410L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2410L 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR

Contextual Info: MOTOROLA Order this document by VN2406L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc

Contextual Info: MOTOROLA Order this document by VN2406L/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc

VN10LM

Contextual Info: MOTOROLA Order this document by VN10LM/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage

MPF6660

Abstract: MPF6659 MPF6661 FET small signal transistors motorola motorola *6659
Contextual Info: MOTOROLA Order this document by MPF6659/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS

FET small signal transistors motorola

Contextual Info: MOTOROLA Order this document by MDC5000T1/D SEMICONDUCTOR TECHNICAL DATA MDC5000T1 SMALLBLOCK Low Voltage Bias S tabilizer • Maintains Stable Bias Current in Various Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast

Contextual Info: MOTOROLA Order this document by VN0610LL/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ

VN2222LL

Abstract: VN2222L
Contextual Info: MOTOROLA Order this document by VN2222LL/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc

2n7000 motorola

Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

2N7000 MOTOROLA

Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

To92 transistor motorola

Abstract: 2N7000 fet 2n7000
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ