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    IRFF111 Price and Stock

    Rochester Electronics LLC IRFF111

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFF111 Bulk 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3
    • 10000 $3
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF111

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF111 350 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    New Jersey Semiconductor Products Inc IRFF111

    TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,3.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF111 280
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $17.6
    • 10000 $17.6
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    Control Technology, Inc. (CTI) / CTI Semiconductor IRFF111

    TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,3.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF111 20
    • 1 $8.13
    • 10 $4.065
    • 100 $4.065
    • 1000 $4.065
    • 10000 $4.065
    		Buy Now

    International Rectifier IRFF111

    TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,3.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF111 20
    • 1 $8.13
    • 10 $5.962
    • 100 $5.42
    • 1000 $5.42
    • 10000 $5.42
    		Buy Now
    IRFF111 1
    • 1 $7.2273
    • 10 $6.0228
    • 100 $6.0228
    • 1000 $6.0228
    • 10000 $6.0228
    		Buy Now
    Find more IRFF111 price and stock on Findchips.com

    IRFF111 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF111 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF111 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. Scan PDF
    IRFF111 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF111 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF111 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF111 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF111 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF111 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF111 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF111 Unknown FET Data Book Scan PDF
    IRFF111 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF111 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF111R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF111R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF111R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF113

    Abstract: TA17441
    Text: IRFF110, IRFF111, IRFF112, IRFF113 S E M I C O N D U C T O R 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. IRFF113 TA17441

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    2N6782U

    Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    DD 127 D TRANSISTOR

    Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786

    irff113

    Abstract: TA17441 SS1020
    Text: h a f r r is IRFF110, IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 O hm , N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. RFF113 irff113 TA17441 SS1020

    1rff110

    Abstract: IRFF110 IRFF111 IRFF113 F112 FF110 IRFF112 cs 30-08 io4
    Text: -;- Standard Power M O SFETs IRFF110, IRFF111, IRFF112, IRFF113 File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHAN C EM EN T MODE


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF112 IRFF113 758VQSS 1rff110 IRFF110 IRFF111 F112 FF110 cs 30-08 io4

    Untitled

    Abstract: No abstract text available
    Text: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF111, IRFF112, IRFF113 IRFF110, RFF112, RFF113

    1RFF111

    Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
    Text: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF 7SD01 1RFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF110, IRFF112 IRFF113 1RFF111 a08g IRFF110 IRFF111

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    F110F

    Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
    Text: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF Number2022 IRFF110R, IRFF111R IRFF112R, IRFF113R 0V-100V tICS-41111 IRFF111R, IRFF112R F110F SK 6211 TD-205A flower in the rain IRFF110R IRFF113R

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


    OCR Scan     		PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

    CH35Q

    Abstract: G325 205AP G-324 International Rectifier 326 08TAIN irff110
    Text: H E 0 I 4055 452 GOG^fc, 0 | Data Shfeet No. PD-9.343F I NTERNATIONAL RECTIFIER - 3 f INTERNATIONAL RECTIFIER T O R HEXFET'TRANSISTOHS IRFFTIO IRFF111 N-CHANNEL POWER MOSFETs IRFF1 1 2 TO-3 9 PACKAGE IRFF1 1 3 Features: 100 Volt, 0.6 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF IRFF11Q IRFF111 T-39-07 G-328 CH35Q G325 205AP G-324 International Rectifier 326 08TAIN irff110

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    fd220

    Abstract: IRFD221
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 220 IRFD221 IRFD222 IR FD 223 Advance Inform ation S m all-S ig nal T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 0 8 0 H M 200 VOLTS


    OCR Scan     		PDF IRFF112, IRFF113 IRFF110 fd220 IRFD221

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221