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    FET SMD Search Results

    FET SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX601BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLE32SN120SH1L
    		Murata Manufacturing Co Ltd FB SMD 1210inch 12ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601BH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX471BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 470ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX601SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd

    FET SMD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GP145

    Abstract: MGF0915A PO36 MGF0915 fet GP145
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		MGF0915A MGF0915A 26dBm 800mA GP145 PO36 MGF0915 fet GP145 PDF

    MGF0914A

    Abstract: fet 4901 0648
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		MGF0914A MGF0914A 26dBm 800mA 50ohm fet 4901 0648 PDF

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		applicat174 PMBFJ175 PMBFJ176 PMBFJ177 OT-23 OT-89 OT-143 OT-223 OT-23 SMD CODE MARKING s7 SOT23 PMBFJ111 PMBFJ174 BSR56 BFT46 PDF

    uhf 1kw amplifier

    Abstract: MGF0916A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		MGF0916A MGF0916A 23dBm 100mA uhf 1kw amplifier PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    Original     		MGF0913A MGF0913A 31dBm 18dBm 200mA Unit39 50ohm PDF

    FET K 1358

    Abstract: 9452 smd MGF0916A fet smd 2657 FET
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA 50pcs) June/2004 FET K 1358 9452 smd fet smd 2657 FET PDF

    MGF0915A

    Abstract: GP145 MGF0915 PQ-32/CTD-17765
    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm


    OCR Scan     		MGF0915A MGF0915A 23dBm GP145 MGF0915 PQ-32/CTD-17765 PDF

    MGF0913A

    Contextual Info: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm


    OCR Scan     		MGF0913A MGF0913A 31dBm 18dBm 200mA PDF

    ADD30

    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power


    OCR Scan     		MGF0916A MGF0916A 23dBm 100mA ADD30 PDF

    GP145

    Abstract: MGF0915
    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power


    OCR Scan     		MGF0915A MGF0915A 26dBm GP145 MGF0915 PDF

    MGF0916A

    Abstract: 094-3 MAG
    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm TYP. @ f=1.9GHz,Pin=5dBm


    OCR Scan     		MGF0916A MGF0916A 23dBm 100mA 094-3 MAG PDF

    MGF0913A

    Abstract: 1709-1
    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    OCR Scan     		MGF0913A MGF0913A 31dBm 18dBm 200mA 1709-1 PDF

    FET K 1358

    Abstract: MGF0916A gp 752 9452 smd
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA 50pcs) FET K 1358 gp 752 9452 smd PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) PDF

    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Unit: FEATURES • High output power


    OCR Scan     		MGF0914A MGF0914A 26dBm 800mA PDF

    gm 4511

    Abstract: GP 841 Diode MGF0917A scl 1444
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		MGF0917A MGF0917A 24dBm gm 4511 GP 841 Diode scl 1444 PDF

    4977 gm

    Abstract: MGF0919A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		MGF0919A MGF0919A 30dBm 12dBm 300mA 4977 gm PDF

    Mag 613

    Abstract: MGF0918A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		MGF0918A MGF0918A 27dBm 150mA Mag 613 PDF

    MGF0920A

    Abstract: n channel fet k 1118
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


    Original     		MGF0920A MGF0920A 32dBm 15dBm 400mA n channel fet k 1118 PDF

    mitsubishi 7805

    Abstract: 7805 pi MGF0918A 7805 smd
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		MGF0918A MGF0918A 27dBm 150mA 50pcs) d-162 mitsubishi 7805 7805 pi 7805 smd PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0919A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm TYP. @ f=1,9GHz,Pin=12dBm


    OCR Scan     		MGF0919A MGF0919A 30dBm 12dBm 300mA voltage154 PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		MGF0913A MGF0913A 31dBm 18dBm 200mA PDF

    MGF0916A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA PDF

    MGF0920A

    Abstract: IM335 pt 11400
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


    Original     		MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) t-155 IM335 pt 11400 PDF