FF 030 PK Search Results

Contextual Info: MITSUBISHI OPTICAL DEVICES! MF-156DS-TR123-030/040/050 SONET.'SDH TRANSCEIVER DESCRIPTION '‘ hü< pixsus* ¡" ssì sáiíSKS"««!s: üjjhtxil t n o - - ‘ jii'rv, f > •'>" ’" iK " v r n t iy ¡sc? ¡,~ > ':o K i axes- n .îî "âÿrs ”««■ ai rrc s t. ft w h s 's v w s by »“ « n ff" r ' r g i t i s i

rie 1105 resistor specification

Abstract: b3b72S2
Contextual Info: M M O TO R O LA Military 10538 Bi-Quinary Counter ELECTRICALLY TESTED PER: MPG 10538 The 10538 is a four bit counter capable of divide by two, five, or ten functions. It is composed of four set-reset master-slave flip-flops. Clock inputs trigger on the positive going edge of the clock pulse.

dm 1265 r

Contextual Info: M M O T O R O L A Military 10536 Universal Hexadecimal Counter ELECTRICALLY TESTED PER: 5962-8774501 The 10536 is a high speed synchronous counterthat can count up, count down, preset, or stop count at frequencies exceeding 100 MHz. The flexibility of this de­

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R A LL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - , - RESERVED. - D C D C MOUN .100 PC 2X HOLE PATTERN TOLERANCES FOR ALL PCB LAYOUT DIMENSIONS TO BE + . 0 0 2 THE EOLLOWING EUNCTIONS

TRANSISTOR BI 243

Contextual Info: Eli SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22A1/2/3 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. - P t L <t>b bi 10.7 11.0 .422 .433 3.0 3.2 .119 .125 .024 .030 .600 .750 .50 NOM. 11.6 12.0 .020 NOM. .457 3.0 3.3 .119 .129 6.9 7.5 .272 .295 e2 E 2.3 2.8 .091

TSPD11CGPC004

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T By 2 3 P U B LIC A T IO N R IG H T S - -, REVISIONS RESERVED. AD - 00 D E S C R IP T IO N A1 RE VI S E D RER EC O -11-005027 RK I MAR 11 HMR SPEC IFICATIO NS! . 030 3X D 195

L123

Abstract: WSK-1A348-A2 7C3T-14474-EA 97BG-14474-AAB LS054R-403-N-4 7C3T-14474-GA 7C3T-14474-LA c19025 J112B SAE J1128
Contextual Info: 13 10 PLATING INFORMATION WIRE BRUSH TO BE NO MORE THAN 0.40 FROM CONDUCTOR CRIMP ZONE A1ZONE A2 INSIDE TERMINAL WIRE BRUSH TO BE BELOW TOP OF CONDUCTOR CRIMP ' w SECTION Z - Z S C A L E 5:1 . SECTION A-A PLATING NOTES: {FOR SMALL AND LARGE POLARIZATION RIB TERMINALS)

Contextual Info: ILD621/621GB QUAD CHANNEL ILQ621 /621GB DUAL CHANNEL Infineon technologies Multi-Channel Phototransistor Optocoupler FEATURES D im e n sio n s in in c h e s m m • Alternate Source to TLP621 -2/-4 and TLP621G B -2/-4 • Current Transfer Ratio (CTR) at Ip= 5.0 mA

H21B

Abstract: H21B1 H21B2 H21B3
Contextual Info: E SOLI» □1 STATE D E | 3 A 7 5 0 a i □01c17a4 fi | •— I v c w nr k/ Optoelectronic Specifications. 1mm Aperture Photon Coupled Interrupter Module H21B1,H21B2,H21B3 The GE Solid State H21B Interrupter Module is a gallium arse­ nide infrared emitting diode coupled to a silicon darlington con­

tspd11cgspc0

Contextual Info: CDNVERSIDN CHART CDNVERSIDN CHART D C B INCH MM INCH MM ,002 0 ,0 5 ,3 7 4 9 ,4 9 ,0 0 5 0,12 ,3 9 6 1 0 ,0 6 ,0 0 8 0,20 ,4 0 0 1 0 ,1 6 ,010 0 ,2 5 ,5 2 4 1 3 ,3 1 ,0 1 4 0 ,3 6 ,0 1 8 0 ,4 4 ,020 0 ,5 2 ,0 2 8 0 ,7 1 ,0 3 0 0 ,7 6 ,0 3 5 0 ,8 9 ,0 4 0 1,02

RF2119

Abstract: PSSOP16 F2119
Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held

tai-157

Abstract: Trompeter 305 305-13 BL-982 RAYCHEM 1125
Contextual Info: RED INDICATES ORIGINAL OASH A NO / B \ -201 -202 -203 -204 -205 -206 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -210 -219 -220 -221 -222 -223 -224 -225 INCH .005 .030 .125 .187 .190 .255 .344 .439 .443 .500 .590 .600 1 .00 1.164 1.25 1.289 1.75

05-03-30

Contextual Info: \ î_ DETAIL2 DETAIL1 Scale 7:1 Scale 10:1 SIGNAL P A R GROUND/POWER A-A B-B NOTES: I PRODUCT SPECIFICATION PS-91525-001 2. PACKAQNG SPECIFICATION PK-91629-002 TRAY AND PK-91629-003 (TAPE AND REEL) 3. SCREW THREAD M2A X 0 / PITCH. RECOMMENDED SCREW THREAD M2 X 0.4 PITCH

33077

Abstract: tyco "Pushbutton Switch" tspd11cgspc0 TSPD11FGPC004
Contextual Info: 3 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 - LOC REVISIONS D IST AD 00 RESERVED. BY TYCO ELECTRONICS CORPORATION. LTR A D E SC RIPTIO N DATE ECO — 0 5 — 13095 DWN IB 06JUN06 S P E C IF IC A T IO N S :

MTA3055E

Abstract: a/MTA3055E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS

SHER601

Abstract: SHER602 SHER603 SHER605 SSF11 SSF12 SSF13 SSF14
Contextual Info: SINO—AMERICAN SILICON ZD 54E • fl2fll74b 0000026 S ■ HIGH E FF IC IE N C Y R E C T IF IE R S 'T - 0 3 - 1 7 OPERATING AND STO R A G E TEM PER A TU R E - 6 5 ° C to + 17 5°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave

Jaso J 140 N

Abstract: 1A34a WSK-1A348-A2 2L1T-14421-DA SD-33012-001 USCAR-21 C19025 PK-31300-516 -123A 2LIT-14421-CA
Contextual Info: 7 T A B LE 1 - TERMINAL CRIMP DIMENSIONS R EF E R E N C E T A B LE SUPPLER PART NO. RGHT PAYOFF L ffT PAYOFF 33000-0002 33000-1002 FORD PART NO. PLATNG WIRE SIZE 2L1T-14421-OA TN vg 2LÍT-14421-CA TN 16 avg 2L1T-14421-CA TN 16 avg 2L1T-14421-CA TN 20 avg ZZ ava

2N6546

Abstract: 2N6547 180I 20C1 2N5875 2N5877
Contextual Info: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power

130LA10A

Abstract: 130LA1 CH1817 CH1817ET
Contextual Info: Vi-W PKflHUV m * <• JUK 2 8 ' fc ’ •^ '9 , Cenmetek m ic ro e le c tro n ic s CH1817 / CH1817ET* — Low Profile Data Access Arrangement DAA Direct Connect Telephone Line Interface INTRODUCTION FEATURES The Cermetek CH1817 Low Profile DAA module provides thor­

2N3640

Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
Contextual Info: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed

BH Rf transistor

Abstract: mrf1150m
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.

Contextual Info: 20 PART CHARACTERISTICS NUMBER OF POSITION ASSEMBLY ITEM NUMBER 02 4 3 0 2 5 -0 2 0 0 04 4 3 0 2 5 -0 4 0 0 SEE NOTE LA S T CIRCUIT TYP. MATERIAL 0.71 TYP — | SIZES 2 0.71 & 4 06 4 3 0 2 5 -0 6 0 0 08 4 3 0 2 5 -0 8 0 0 10 4 3 0 2 5 -1 0 0 0 12 4 3 0 2 5 -1 2 0 0

Burr Brown 3583AM

Abstract: 17313L ic 3583 3583
Contextual Info: 3583 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • WIDE POWER SUPPLY VOLTAGE: ±70V to ±150V • OUTPUT CURRENT TO 75mA • SLEW RATE: 30V/(is • FET INPUT: lB = 20pA max • THERMAL SHUT-DOWN PROTECTION • HERMETIC TO-3 PACKAGE, ISOLATED

27S43

Contextual Info: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs