SSF13 Search Results

Mosfet

Abstract: SSF13N50F
Contextual Info: SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.41Ω(typ.) ID 13A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and general purpose applications

SSF1321P

Abstract: MosFET
Contextual Info: SSF1321P -1.7A, -20V, RDS on 0.079Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)

SSF1320N

Abstract: MosFET
Contextual Info: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

SSF1341

Abstract: SOT23
Contextual Info: SSF1341 D DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

Contextual Info: SSF1332E 0.6A, 20V,RDS ON 600mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-323 A Description L The SSF1332E provide the designer with the best S 2 3 Top View B 1 Combination of fast switching, low on-resistance

SSF138K

Contextual Info: SSF138K 640mA, 50V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF138K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Contextual Info: SSF1331P -1.5A, -30V, RDS on 0.112Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

ssf1321p

Contextual Info: SSF1321P -1.7A, -20V, RDS on 0.079Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

SSF1331P

Contextual Info: SSF1331P -1.5A, -30V, RDS on 0.112Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

Contextual Info: SSF1321P -1.7A, -20V, RDS on 0.079Ω P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

SSF14

Abstract: SSF11 SHER601 SHER602 SHER603 SHER605 SSF12 SSF13 ssf24 SSF-13
Contextual Info: SINO— AMERICAN SILICON 54E ZD • fl2fll74b 0000026 S ■ H IG H E F F IC IE N C Y R E C T IF IE R S 'T - 0 3 - 1 7 OPERATING AND STORAGE TEMPERATURE -6 5 ° C to +175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load

HBL57484IV

Abstract: GF15G HBL24GBA512GY legrand 037 01 legrand 037 05
Contextual Info: Hubbell Wiring Systems Delivery Systems Product Guide Table Of Contents Hubbell Raceway Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page 1 Hubbell’s innovative Raceway Systems include a choice of steel, aluminum and non-metallic, single

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any