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    FF SOT23 Search Results

    FF SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    FF SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 724 diode

    Abstract: SB420 sot-23 MARKING CODE 21 SB420D
    Text: SB420D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FF Absolute Maximum Ratings Ta= 25OC Parameter Symbol Value


    Original     		PDF SB420D OT-23 marking 724 diode SB420 sot-23 MARKING CODE 21 SB420D

    marking 724 diode

    Abstract: sot-23 MARKING CODE 21 SB420D marking code TS
    Text: SB420D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FF Absolute Maximum Ratings Ta= 25OC Parameter Symbol Value


    Original     		PDF SB420D OT-23 marking 724 diode sot-23 MARKING CODE 21 SB420D marking code TS

    BCV47

    Abstract: No abstract text available
    Text: BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS • ■ ■ ■ Type Marking BCV27 FF BCV47 FG SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE DARLINGTON HIGH GAIN, HIGH INPUT IMPEDANCE


    Original     		PDF BCV27 BCV47 BCV26 BCV46 OT-23 BCV47

    BCV27

    Abstract: No abstract text available
    Text: N BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCV27 OT-23 BCV27

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCV27 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BCV27 BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCV27 OT-23

    BCV27

    Abstract: No abstract text available
    Text: BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCV27 OT-23 BCV27

    smd npn darlington bcv47

    Abstract: smd npn darlington BCV27 BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON TRANSISTORS BCV27 BCV47 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking:BCV27= FF BCV47= FG ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BCV27 BCV47 OT-23 BCV27= BCV47= BCV27 C-120 47Rev131004E smd npn darlington bcv47 smd npn darlington BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v

    PW 2N

    Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
    Text: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4


    OCR Scan     		PDF 2N/PN/SST4391 2N4391 2N4392 2N4393 2N/PN/SST4392 2N/PN/SST4393 PN4391 PN4392 PN4393 PW 2N marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent

    2n5432

    Abstract: TO206AC 2N5433
    Text: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number v G S o ff (V) r D S (o n ) M a x ( Q ) k x o ff) iy p (pa) ton Typ (ns) 2N5432 - 4 t o -1 0 5 10 2.5 2N5433 - 3 to - 9 7 10 2.5 2N5434 -1 t o - 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS


    OCR Scan     		PDF 2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/5433/5434) S-04028-- 04-Jun-01 2N5432 TO206AC

    marking 2904

    Abstract: MDC1000B MDC1000 318E-04
    Text: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers


    OCR Scan     		PDF O-226AA) O-236AB) OT-23 318E-04 O-261 OT-223 O-226AA DC1000A MDC1005A MDC1000 marking 2904 MDC1000B 318E-04

    Untitled

    Abstract: No abstract text available
    Text: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR


    OCR Scan     		PDF FMMT2369 FMMT2369A 300ns FMMT2369R FMMTA2369A FMMTA2369AR FMMT2369 10iiA,

    transistor marking c y

    Abstract: Transistor hFE CLASSIFICATION Marking CE
    Text: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT ff»1100MHz TYP. ABSOLUTE MAXIMUM RATINGS (TA-25t:) Characteristic Sym bol Collector-Base Voltage Coltector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KSC2757 1100MHz OT-23 transistor marking c y Transistor hFE CLASSIFICATION Marking CE

    diode LR 105

    Abstract: No abstract text available
    Text: BAS40/-04/-05/-06_ visB ff Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection Applications Fast switches in thick and thin film circuits


    OCR Scan     		PDF BAS40/-04/-05/-06_ 01-Apr-99 BAS40/-04/-05/-06 BAS40 BAS40-05, BAS40-04, BAS40-06, diode LR 105

    bfs20

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS


    OCR Scan     		PDF BFS20 MAM255 bfs20

    marking 712 sot-23

    Abstract: marking code WM sot23 712 SOT23 TVS SOT23 712 712 marking MARKING WM SOT-23 XS marking code X_S marking
    Text: ff PROlEK DEVICES PSM71S Engineered solutions fo r the transient environment APPLICATIONS RS-485 Transceivers Network Interfaces Wireless Systems Hand Held/Portable Electronics h • • • • IEC 1000-4 COMPATIBLE SOT-23 PACKAGE FEATURES • • • •


    OCR Scan     		PDF RS-485 OT-23 RS-485. marking 712 sot-23 marking code WM sot23 712 SOT23 TVS SOT23 712 712 marking MARKING WM SOT-23 XS marking code X_S marking

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage


    OCR Scan     		PDF MMBR5179 OT-23

    SOT23 E.8

    Abstract: TK713xxM ATF SOT23-5
    Text: Linear ICs TK713xxM NOT RECOMMENDED FOR NEW DESIGNS LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ ■ Low Quiescent Current ■ Portable Consum er Equipment ■ Very Stable Output ■ Cordless Telephones ■ Active Low O n/O ff Control


    OCR Scan     		PDF OT-25) TK713xxM TK713xx SOT23 E.8 TK713xxM ATF SOT23-5

    bcv47

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON Ä 7 # MoeœiuserœiD BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS Type M arking BCV27 FF BCV47 FG • SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS


    OCR Scan     		PDF BCV27 BCV47 BCV47 BCV26 BCV46 OT-23 Diss000

    W18 sot23

    Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
    Text: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA


    OCR Scan     		PDF 050I3) OT143 OT323 OT343 BFR92AW BFR93AW BFS17AW S852TW BFR181TW BFR182TW W18 sot23 ic w83 SOT343R bfp280tw SOT-343 BFP181TW

    K348M

    Abstract: DB3-G144
    Text: TK11348M rv!v o ff. $0 3 - SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Applications Information


    OCR Scan     		PDF TK11348M DB3-G144 TK11348M TK113* QH7-B106. DP3-F016. K348M DB3-G144

    IC CD 4440 pin diagram

    Abstract: marking KE SOT-89 sem 3040 equivalent transistor K 3565 U G N 3140 sensor
    Text: ÎSSTOKO TK113xxB VOLTAGE REGULATOR W ITH O N /O FF SW ITCH FEATURES APPLICATIONS • High Voltage Precision at ± 2.0% ■ Battery Powered Systems ■ Active Low On/Off Control ■ Cellular Telephones ■ Very Low Dropout Voltage 80 mV at 30 mA ■ Pagers


    OCR Scan     		PDF OT-23L OT-89 TK113xxB 13xxB IC CD 4440 pin diagram marking KE SOT-89 sem 3040 equivalent transistor K 3565 U G N 3140 sensor

    Untitled

    Abstract: No abstract text available
    Text: 3-Pin One-Cell Step Up/ Down DC-to-DC C onverter, /On & O ff Switch ADVANCED IN FO R M A TIO N APPLICATIONS FEATURES ON/OFF Switch Guaranteed Start-up From Below 0.9 Volt High Efficiency Low Quiescent Current 300mA Switch @ 5 Volt 200kHz Switching Rate


    OCR Scan     		PDF 300mA 200kHz OT-23 OT-89 AS3873 AS3873

    SOT323-6

    Abstract: BF772W
    Text: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB


    OCR Scan     		PDF BF772W BF775A OT-23 OT-23 OT-323 OT-323 OT-143 SOT323-6