FF1400R17IP4 Search Results
FF1400R17IP4 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FF1400R17IP4BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 1200V 1400A | Original | 643.38KB | |||
FF1400R17IP4PBOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 1200V 1400A | Original | 593.42KB |
FF1400R17IP4 Price and Stock
Infineon Technologies AG FF1400R17IP4BOSA1IGBT MODULE 1700V 1400A |
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FF1400R17IP4BOSA1 | Tray | 6 | 1 |
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FF1400R17IP4BOSA1 | Tray | 14 Weeks | 2 |
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FF1400R17IP4BOSA1 | Bulk | 1 |
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FF1400R17IP4BOSA1 | 3 |
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Infineon Technologies AG FF1400R17IP4PBOSA1IGBT MODULE 1700V 1400A |
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FF1400R17IP4PBOSA1 | Tray | 2 | 1 |
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FF1400R17IP4PBOSA1 | Tray | 14 Weeks | 3 |
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FF1400R17IP4PBOSA1 | 15 Weeks | 3 |
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FF1400R17IP4PBOSA1 | 2 |
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Infineon Technologies AG FF1400R17IP4B60BOSA1PP IHM I |
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FF1400R17IP4B60BOSA1 | Tray | 2 |
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FF1400R17IP4B60BOSA1 | Tray | 14 Weeks | 2 |
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FF1400R17IP4B60BOSA1 |
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FF1400R17IP4B60BOSA1 | 58 | 1 |
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FF1400R17IP4B60BOSA1 | 58 | 1 |
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Infineon Technologies AG FF1400R17IP4PIGBT Modules 1700 V, 1400 A dual IGBT module |
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FF1400R17IP4P | 1 |
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Infineon Technologies AG FF1400R17IP4IGBT Modules IGBT Module 1400A 1700V |
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FF1400R17IP4 |
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FF1400R17IP4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FF1400R17IP4
Abstract: diode 611 FF1400
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Original |
FF1400R17IP4 FF1400R17IP4 diode 611 FF1400 | |
FF1400R17IP4
Abstract: peak psd
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Original |
SIDC130D170H L4504A, FF1400R17IP4 peak psd | |
FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
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Original |
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fuji igbt moduleContextual Info: P011.02 TM Dual channel low cost gate driver board for PrimePACK IGBT module General description Features • Ready to use gate driver board for PrimePACK TM • Suitable for PrimePACK TM TM 2 and PrimePACK IGBT module 3 IGBT module • Suitable for chopper, two- and multi-level inverter topologies |
Original |
Enderstrasse94, fuji igbt module | |
Contextual Info: SIDC130D170H Fast switching diode A Features: • 1700V technology, Emitter Controlled th Diode 3 generation, 200 µm chip soft, fast switching low reverse recovery charge small temperature coefficient Qualified according to JEDEC for target |
Original |
SIDC130D170H L4504A, | |
Contextual Info: IGC136T170S8RH2 IGBT3 Power Chip Features: • 1700V Trench & Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications |
Original |
IGC136T170S8RH2 IGC136T170S8RH2 L7804N, L7804U, L7804F, | |
Contextual Info: IGC136T170S8RH2 IGBT3 Power Chip Features: • 1700V Trench & Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications |
Original |
IGC136T170S8RH2 IGC136T170S8RH2 L7804N, |