FI535BOS Search Results
FI535BOS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking code C1H SMD
Abstract: sab-c501-l24p
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16-bit P-DIP-40, P-LCC-44 P-MQFP-44 SAB-C501 SAF-C501 C501-L/C501-1R 80C32/C52 80C52 fl235b05 marking code C1H SMD sab-c501-l24p | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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T-75-37-07 235b05 82532N-TS PL-CC-68 MARKING CODE SMD JW TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000 | |
SDA30C162
Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
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30C163-2 30C163-2 0/A17 1/A18 A0-A15 ues04736 P35b05 fl23SbOS SDA30C162 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor | |
Contextual Info: flSBSbOS GDIETME SIEMENS 2b? • PROFET BTS 430 K2 Smart Highside Power Switch Product Summary Features • Clamp of negative voltage at output 50 Vbb- Vout Avalanche Clamp • Short-circuit protection Vbb operation 4 .5 . . 32 • Current limitation -32 |
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fl235L05 TQ-220 BTS430K2 E3043 Q67060-S6200-A2 BTS430K2 E3043 Q67060-S6200-A3 O-220 | |
Contextual Info: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions |
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P-LCC-28-R P-DIP-28 fi235b> | |
82c251Contextual Info: 47E P • A235b05 DDBlEbS 1 « S I E G SAB 82C250/SAB 82C251 - P 5 * - M r \5 Advanced Peripheral Interface Controller SIEMENS AKTIENGESEL LSCHAF A dva nce Inform a tion • SAB 82C250: Dual channel asynchronous serial controller Fully programmable serial interface |
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A235b05 82C250/SAB 82C251 82C250: 82C251: 16C450 16C452 16C451-compa 0031ST5 82C250/82C251 82c251 | |
Contextual Info: SIEM ENS 5-V Low-Drop Voltage Regulator TLE 4260 Preliminary Data Bipolar 1C Features • • • • • • • • • • • Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity |
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Q67000-A8187 P-T0220-5-1 Q67000-A9044 P-T0220-5-2 AED00587 fl235t | |
Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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Q62702-F1051 OT-23 a23SbQS | |
0s35
Abstract: b17 zener diode
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023SbDS 0s35 b17 zener diode | |
Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 ^RAC RAS access time |
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314405BJ/BJL-50/-60/-70 fl23SbOS | |
Contextual Info: SIEMENS 64fach-Silizium-Kreissegmentfotodiode mit sehr kleinem Dunkelstrom 64-Element Silicon Circular Array with Very Low Dark Current KOM 2059 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features |
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64fach-Silizium-Kreissegmentfotodiode 64-Element fi535bOS 0DS7704 HF01402 | |
23N05Contextual Info: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"’ SIPMOS PowerTransistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current |
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23N05 SPD23N05 P-T0252 Q67040-S4152 SPU23N05 P-T0251 Q67040-S4132-A2 S35bQ5 Q133777 SQT-89 23N05 |