FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Search Results

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
GC321AD7LP153KX18D	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331BD7LP473KX18L	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC332DD7LP154KX18L	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LQ154KX18L	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TEST88 Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools	Original	TPC8A01 Qg17nC TEST88	PDF
TPC8A01 Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools	Original	TPC8A01 Qg17nC TPC8A01	PDF
TPC8A01 Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •	Original	TPC8A01 Qg17nC TPC8A01	PDF
TPC8A01 Abstract: MARKING 3AB Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •	Original	TPC8A01 Qg17nC TPC8A01 MARKING 3AB	PDF
3N128 Contextual Info: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com munications equipment.	OCR Scan	3N128/D_ 3N128 5000/imhos 3N128/D 3N128/D 3N128	PDF
TPC8A01 Abstract: MARKING J1A 4X25 pdii Contextual Info: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS	OCR Scan	TPC8A01 TPC8A01 MARKING J1A 4X25 pdii	PDF
d1595 Abstract: 2SK1108 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance	Original	2SK1108 2SK1108 d1595	PDF
2SK660 Abstract: 2SK66 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance	Original	2SK660 2SK660 2SK66	PDF
2SK660 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance	Original	2SK660 2SK660	PDF
2SK3719 Abstract: TRANSISTOR BJ 026 drain Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.13 –0.05 • Compact package • High forward transfer admittance	Original	2SK3719 2SK3719 TRANSISTOR BJ 026 drain	PDF
Bft46 Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic	Original	BFT46 MAM385 R77/02/pp11 Bft46	PDF
D1629 Abstract: 2SK3653 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES	Original	2SK3653 2SK3653 D1629	PDF
transistor NEC 2SK2552B Abstract: 2SK2552B SC-75 D17282 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.	Original	2SK2552B 2SK2552B SC-75 transistor NEC 2SK2552B SC-75 D17282	PDF
CRS15 Abstract: BFT46 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic	Original	BFT46 MAM385 R77/02/pp11 CRS15 BFT46	PDF

Contact Electronics Abstract: 2SK4028 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4028 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33	Original	2SK4028 2SK4028 3pXSOF03 Contact Electronics	PDF
diode marking j35 Abstract: 2SK1109 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package	Original	2SK1109 2SK1109 SC-59 diode marking j35 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31	PDF
D1594 Abstract: 2SK2552 SC-75 J3300 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES	Original	2SK2552 2SK2552 SC-75 D1594 SC-75 J3300	PDF
D1594 Abstract: 2SK3230 SC-89 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES	Original	2SK3230 2SK3230 SC-89 D1594 SC-89	PDF
transistor NEC 2SK2552 Abstract: 2sk2552 j7 D1594 2SK2552 SC-75 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES	Original	2SK2552 2SK2552 SC-75 transistor NEC 2SK2552 2sk2552 j7 D1594 SC-75	PDF
Contact Electronics Abstract: 2SK4027 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4027 is suitable for converter of ECM. 0.4 +0.1 –0.05 2.0 MIN. FEATURES • High gain	Original	2SK4027 2SK4027 SC-59 Contact Electronics	PDF
marking AE Abstract: 2SK3718 SC-89 NEC JAPAN Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3718 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.1–0.05 0.4 The 2SK3718 is suitable for converter of ECM. • Compact package	Original	2SK3718 2SK3718 SC-89 marking AE SC-89 NEC JAPAN	PDF
2SK3653B Abstract: 2SK3653 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.	Original	2SK3653B 2SK3653B 2SK3653	PDF
2SK3230B Abstract: SC-89 Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.	Original	2SK3230B 2SK3230B SC-89 SC-89	PDF
CMUDM7001 Abstract: mosfet low vgs Contextual Info: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed	Original	CMUDM7001 CMUDM7001 OT-523 100mA mosfet low vgs	PDF

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Search Results

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Result Highlights (5)

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Datasheets Context Search

TEST88

TPC8A01

TPC8A01

TPC8A01

3N128

TPC8A01

d1595

2SK660

2SK660

2SK3719

Bft46

D1629

transistor NEC 2SK2552B

CRS15

Contact Electronics

diode marking j35

D1594

D1594

transistor NEC 2SK2552

Contact Electronics

marking AE

2SK3653B

2SK3230B

CMUDM7001