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    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Search Results

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TK2P60D

    Abstract: K2P60D
    Text: TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS


    Original     		PDF TK2P60D TK2P60D K2P60D

    K2P60D

    Abstract: TK2P60D
    Text: TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V


    Original     		PDF TK2P60D K2P60D TK2P60D

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)


    Original     		PDF TK4P60DB 14MAX 58MAX

    TK4P60DB

    Abstract: MOS FIELD EFFECT TRANSISTOR
    Text: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)


    Original     		PDF TK4P60DB 14MAX 58MAX TK4P60DB MOS FIELD EFFECT TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK4P60DB 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DA Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)


    Original     		PDF TK4P60DA 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20


    Original     		PDF SSM6L40TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 2.1±0.1 Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage


    Original     		PDF SSM6N39TU

    2sk3569

    Abstract: 2SK3569 equivalent transistor 2SK3569 lw015f84
    Text: TENTATIVE 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3569 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage


    Original     		PDF 2SK3569 2sk3569 2SK3569 equivalent transistor 2SK3569 lw015f84

    K4115 toshiba

    Abstract: TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)

    Untitled

    Abstract: No abstract text available
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX

    SSM6L14FE

    Abstract: No abstract text available
    Text: SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.6±0.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC


    Original     		PDF SSM6L14FE SSM6L14FE

    Untitled

    Abstract: No abstract text available
    Text: SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications • Low ON-resistance: Ron = 38.5mΩ max (@VGS = 4.5V) Unit: mm 2.1±0.1 Ron = 25.0mΩ (max) (@VGS = 10V) Unit Drain–source voltage VDSS


    Original     		PDF SSM6K406TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.6±0.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC


    Original     		PDF SSM6L14FE 05mitation,

    TK6P

    Abstract: TK6P53D transistor Toshiba
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX TK6P TK6P53D transistor Toshiba

    Untitled

    Abstract: No abstract text available
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK12J60U

    k15j60u

    Abstract: TK15J60U K15J60 SC-65 TC40160
    Text: TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK15J60U k15j60u TK15J60U K15J60 SC-65 TC40160

    k20j60

    Abstract: K20J60U
    Text: TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


    Original     		PDF TK20J60U k20j60 K20J60U

    k15j60u

    Abstract: No abstract text available
    Text: TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit


    Original     		PDF TK15J60U k15j60u

    k12j60

    Abstract: K12J60U ELEVATOR K12J S7514 K12J6
    Text: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK12J60U k12j60 K12J60U ELEVATOR K12J S7514 K12J6

    Untitled

    Abstract: No abstract text available
    Text: TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25


    Original     		PDF TK20J60U

    2SK3667

    Abstract: 2sk3667 transistor equivalent 2SK3667 equivalent
    Text: TENTATIVE 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600


    Original     		PDF 2SK3667 2SK3667 2sk3667 transistor equivalent 2SK3667 equivalent

    2SK3567

    Abstract: 2SK3567 equivalent
    Text: TENTATIVE 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600


    Original     		PDF 2SK3567 2SK3567 2SK3567 equivalent