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Toshiba America Electronic Components


Toshiba America Electronic Components TK12J60U(F) MOSFET N-CH 600V 12A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK12J60U(F)	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK12J60W,S1VE(S MOSFET N-CH 600V 11.5A TO3P
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DigiKey	TK12J60W,S1VE(S	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK12J60W
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Bristol Electronics	TK12J60W		65			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK12J60UF Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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ComSIT USA	TK12J60UF		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TK12J60W,S1VQ(O Trans MOSFET NCH 600V 115A 3Pin TO3PN (Alt: TK12J60W,S1VQ(O)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	TK12J60W,S1VQ(O			23 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K12J6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit	Original	TK12J60U	PDF
K12J60U Contextual Info: K12J60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12J60U ○ スイッチングレギュレータ用単位: mm z : Vth = 3.0～5.0 V (VDS = 10 VID = 1 mA) 1.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 単位ドレイン・ソース間電圧	Original	TK12J60U K12J60U	PDF
Contextual Info: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK12J60U	PDF
K12J60U Abstract: TK12J60U k12j60 transistor tc 144 SC-65 K12J Contextual Info: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 12 Pulse (t = 1 ms) (Note 1) IDP 24 A 1 Drain power dissipation (Tc = 25°C)	Original	TK12J60U K12J60U TK12J60U k12j60 transistor tc 144 SC-65 K12J	PDF
k12j60 Abstract: K12J60U ELEVATOR K12J S7514 K12J6 Contextual Info: K12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK12J60U k12j60 K12J60U ELEVATOR K12J S7514 K12J6	PDF