FIG10 Search Results

6968e

Abstract: TF6968E D002P 65a3
Contextual Info: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9  P RDS(ON), VGS # 9  P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications

AP70T03GH

Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
Contextual Info: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: REV. 0.2 FS6989-DS-02_EN Datasheet FS6989 Single-phase Full-wave Motor Driver NOV 2006 FS6989 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

09N20H

Abstract: AP09N20H AP09N20J
Contextual Info: AP09N20H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics D BVDSS RDS ON ID 200V 380mΩ 8.6A G S Description Advanced Power MOSFETs from APEC provide the designer with

AP70T03GP

Abstract: AP70T03GS
Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: FS6989 Single-phase Full-wave Motor Driver General Description Pin Configuration The FS6989 is a single-phase full wave brushless DC motor driver IC with the functions for thermal shutdown, lock protection, power polarity reverse protection, hall bias circuit and external PWM speed control. The

02N60

Abstract: 02N60J 02N60h 2529V
Contextual Info: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S

9936gm

Abstract: AP9936GM-HF
Contextual Info: AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS ON 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1

Matsuo Film CAPACITOR

Abstract: 431A 553m 0068PF RCR-2350 c4430
Contextual Info: m MATSUO METALLIZED POLY ETHYLENE TEREPHTHALATE FILM CAPACITORS A CAUTIONS •T h is capacitor is suitable for D C circuit. In case of A C circuit use, please refer to our sales departm ent. • T h e sum of peak value of A C and D C voltage should not exceed the

CI 3060 elsys

Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Contextual Info: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.

Contextual Info: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

Contextual Info: SSM70T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free, RoHS compliant. BV DSS 30V R DS ON 9mΩ ID 60A S DESCRIPTION G D S The SSM70T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited

Contextual Info: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

CM105B104K25A

Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

MUN2216

Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

EM78P153SN

Abstract: EM78P153SP EM78P153S EM78P153S* writer
Contextual Info: EM78P153S OTP ROM 1. GENERAL DESCRIPTION EM78P153S is an 8-bit microprocessor with low-power and high-speed CMOS technology. It is equipped with a 1024*13-bits Electrical One Time Programmable Read Only Memory OTP-ROM within it. It provides a PROTECTION bit to prevent intrusion of user’s code in the OTP memory as well as 15

48V SMPS

Abstract: KMB8D2N60QA
Contextual Info: SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

KS0075

Abstract: 0B 2262 8 x 8 DOT MATRIX DISPLAY white 8 x 8 DOT MATRIX DISPLAY S6A0075 samsung LCD controller KS0075
Contextual Info: S6A0075 100 SEG / 34 COM DRIVER & CONTROLLER FOR DOT MATRIX LCD June. 2000. Ver. 0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express