FIGURE37 Search Results

Contextual Info: TO SH IBA TMP47C660A/860A CMOS 4-BIT MICROCONTROLLER TMP47C660AN,TMP47C860AN TMP47C660AF, TMP47C860AF The 47C660A/860A are high speed and high performance 4-bit single chip micro computers, integrating the 8bit A/D converter based on the TLCS-470 series. PART No.

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

OP12A

Contextual Info: TOSHIBA TMP47C1260/1660 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F , TMP47C1660F The 47C1260/1660 are the high speed and high perform ance 4 -b it single chip m icrocom puter, w ith large capacity ROM and RAM, based on the 47C660/860 TLCS-470 series .

MC4990

Abstract: 3000 Watt BTL Audio Amplifier MO-187 MO-229 8l marking sd-5 Class AB Audio Power Amplifier CLASS D AUDIO AMPLIFIER 600 ohm
Contextual Info: MC4990 1.25 W Mono Class AB Audio Power Amplifier General Description Features The MC4990 is an audio power amplifier essentially designed for mobile phones and other portable communication devices. It can deliver 1.25 watts of continuous average power to an 8 Ohm BTL load and 2 watts of continuous

Contextual Info: NEC A/PD70216 V50 16-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The /uPD70216 (V50T“) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly-used peripherals to dramatically reduce the size of microprocessor systems. The CMOS construc­

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

46LR16640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR32640A

Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR16320C

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

446H

Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
Contextual Info: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.

BF484

Abstract: IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347
Contextual Info: 16-Channel Short Haul E1 Line Interface Unit IDT82P20516 Version December 17, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

Contextual Info: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

Contextual Info: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: i. fü HA5022/883 H A R R IS S E M I C O N D U C T O R Dual 125MHz Video Current Feedback Amplifier with Disable January 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.

DS5202

Abstract: 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202 EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm
Contextual Info: 芯美电子 EUA5202 2-W Stereo Audio Power Amplifier with Mute DESCRIPTION FEATURES z The EUA5202 is a stereo audio power amplifier that delivering 2W of continuous RMS power per channel into 3-Ω loads. When driving 1W into 8-Ω speakers, the EUA5202 has less than 0.04% THD+N across its

Contextual Info: OCTAL T1/E1 SHORT HAUL LINE INTERFACE UNIT IDT82V2048 FEATURES ! ! ! ! ! ! ! ! Fully integrated octal T1/E1 short haul line interface which supports 100 Ω T1 twisted pair, 120 Ω E1 twisted pair and 75 Ω E1 coaxial applications Selectable Single Rail mode or Dual Rail mode and AMI or

K411

Contextual Info: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version 1 December 7, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.

82p2816

Abstract: 15Dh motorola
Contextual Info: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version August 26, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc.

GD25Q41B

Abstract: GD25Q41
Contextual Info: GD25Q41B DATASHEET 48 - 1 Rev.1.0 Uniform Sector Dual and Quad Serial Flash GD25Q41B Uniform sector dual and quad serial flash GD25Q41BxIGx Contents 1. FEATURES .4

OAOLP2

Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Contextual Info: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.

Contextual Info: IS43/46LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted