FJ 2220 Search Results

28T0157

Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
Contextual Info: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85R256FPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85R256FPF

Abstract: 8A10 MB85R256F Marking code M19
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

2225 X7R 335

Abstract: m270000
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RS64

Abstract: MB85RS64PNF-G-JNE1 RS64 E1115
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-3v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-3v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-9v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-2v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-5v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00020-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128B • DESCRIPTION MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RC64A

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-1v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-5v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

RS64V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-2v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile