FK35V Search Results
FK35V Price and Stock
Cornell Dubilier Electronics Inc AFK477M35H32T-FAluminum Electrolytic Capacitors - SMD 35V 470uF 12.5X13.5 AEC-Q200 |
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AFK477M35H32T-F | 15,455 |
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AFK477M35H32T-F | Reel | 13,600 | 200 |
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Cornell Dubilier Electronics Inc AFK226M35C12T-FAluminum Electrolytic Capacitors - SMD 35V 22uF 5X5.8 AEC-Q200 |
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AFK226M35C12T-F | 10,839 |
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AFK226M35C12T-F | Reel | 1,000 |
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Cornell Dubilier Electronics Inc AFK106M35B12T-FAluminum Electrolytic Capacitors - SMD 35V 10uF 4X5.8 AEC-Q200 |
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AFK106M35B12T-F | 4,136 |
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AFK106M35B12T-F | Reel | 2,000 | 2,000 |
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Cornell Dubilier Electronics Inc AFK227M35F24T-FAluminum Electrolytic Capacitors - SMD 35V 220uF 8X10.2 AEC-Q200 |
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AFK227M35F24T-F | 2,664 |
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AFK227M35F24T-F | Reel | 9,000 | 500 |
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Cornell Dubilier Electronics Inc AFK476M35D16T-FAluminum Electrolytic Capacitors - SMD 35V 47uF 6.3X5.8 AEC-Q200 |
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AFK476M35D16T-F | 2,290 |
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AFK476M35D16T-F | Reel | 12,000 | 1,000 |
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FK35V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 FK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z ) |
OCR Scan |
FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 12.7— 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MG FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
MGFK35V2732 FK35V2732 | |
ld12a
Abstract: s parameters MGFK35V2732 p channel j fet s/ksmh12/2.27/30/GA100SIPC12
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MGFK35V2732 MGFK35V2732 95GHz ld12a s parameters p channel j fet s/ksmh12/2.27/30/GA100SIPC12 | |
K35V4045
Abstract: FK35V4045
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OCR Scan |
FK35V4045 35V4045 200nnA) K35V4045 FK35V4045 | |
FK35VContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 1 2 . 7 - 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK35V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic |
OCR Scan |
MGFK35V2732 FK35V | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2228 1 2 .2 — 1 2 .8 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F K 3 5 V 2 2 2 8 is an in te rn a lly impedance matched GaAs pow er F E T especially designed fo r use in 12 .2 — 12 .8 |
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MGFK35V2228 | |
MGFK35V2732-01
Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
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MGFK35VXXXX MGFK35VXXXX MGFK35V2228 MGFK35V2228-01 MGFK35V2228-51 MGFK35V2732-01 MGFK35V2732-51 MGFK35V4045-01 FK35V4045-51 MGFK35V2732-51 FK35V | |
fet 30 f 124Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK3SV2228 12.2— 12.86Hz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK 35V2228 is an internally impedance matched GaAs power FET especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic |
OCR Scan |
MGFK3SV2228 MGFK35V2228 fet 30 f 124 |