Untitled
Abstract: No abstract text available
Text: Notes on FL inverter transformer use / FLインバータトランス使用上の注意事項 INVERTER Notes on FL inverter transformer use Notes on FL inverter transformer use Since FL Inverters transformers uses ultra thin wire in a small form factor and given the conditions that the FL inverters will be
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INVC303
Abstract: No abstract text available
Text: 6577038 INVC303 FL BACKLIGHT INVERTER UNIT DELIVERY SPECIFICATIONS
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INVC303)
INVC303
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st7032i
Abstract: ST7032I-0D st7032i 0D Xiamen* lcd ACM0802F-FL-YBH-C ACM0802 ST7032i-oD Zettler Electronics COM16 SEG40
Text: DISPLAYTRONIC XIAMEN ZETTLER ELECTRONICS CO., LTD. SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY ACM0802F-FL-YBH-C CHARACTER MODULE VER1.0 CUSTOMER APPROVAL ※ PART APPROVAL NO. ACM0802F-FL-YBH-C : COMPANY CHOP CUSTOMER COMMENTS DISPLAYTRONIC ENGINEERING APPROVAL
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ACM0802F-FL-YBH-C
ACM0802F-FL-YBH-C
st7032i
ST7032I-0D
st7032i 0D
Xiamen* lcd
ACM0802
ST7032i-oD
Zettler Electronics
COM16
SEG40
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T6963C
Abstract: No abstract text available
Text: DISPLAYTRONIC XIAMEN ZETTLER ELECTRONICS CO., LTD SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY CUSTOMER APPROVAL ※ PART NO. : AGM1212I-FL-YBW APPROVAL COMPANY CHOP CUSTOMER COMMENTS DISPLAYTRONIC ENGINEERING APPROVAL DESIGN BY CHECKED BY APPROVED BY AGM1212I-FL-YBW GRAPHIC MODULE
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AGM1212I-FL-YBW
AGM1212I-FL-YBW
T6963C
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ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
Abstract: ballast circuit diagram for 54w tube ICB2FL01G basic ignition second wave B43888A5106M000 BYG22D electronic ballast for fluorescent lighting t5 electronic ballast for T5 lamp EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES PFC BALLAST CONTROL IC
Text: Datasheet V1.1 May 2009 ICB2FL01G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts
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ICB2FL01G
pin14)
167Vpeak
ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
ballast circuit diagram for 54w tube
ICB2FL01G
basic ignition second wave
B43888A5106M000
BYG22D
electronic ballast for fluorescent lighting t5
electronic ballast for T5 lamp
EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES
PFC BALLAST CONTROL IC
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B78326P7373A005
Abstract: ICB2FL01G R402 VDE0108 PG-DSO-19 B32529C0105K000 PG-DSO-19-1 RM10 Epcos ballast circuit diagram for 54w tube lvs1
Text: Datasheet V1.0 February 2009 ICB2FL01G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts
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ICB2FL01G
pin14)
167Vpeak
B78326P7373A005
ICB2FL01G
R402
VDE0108
PG-DSO-19
B32529C0105K000
PG-DSO-19-1
RM10 Epcos
ballast circuit diagram for 54w tube
lvs1
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet V1.2 ICB2FL02G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts
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ICB2FL02G
167Vpeak
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Philips T5 Fluorescent BALLAST
Abstract: EFD25/13/9 Epcos 100nF 250V RM10 PG-DSO-19-1 ICB2FL02G ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC 54W-T5 B32521N8333K000 T1904 EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES
Text: Preliminary Datasheet V1.1 ICB2FL02G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts
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ICB2FL02G
167Vpeak
Philips T5 Fluorescent BALLAST
EFD25/13/9
Epcos 100nF 250V RM10
PG-DSO-19-1
ICB2FL02G
ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
54W-T5
B32521N8333K000
T1904
EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES
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Philips T5 Fluorescent BALLAST
Abstract: 10Turns Ignition Transformer VDE0108 DR12 ICB2FL02G L101 ballast design equation for 54w tube rm5 inductors lvs1
Text: Preliminary Datasheet V1.2 ICB2FL02G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts
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ICB2FL02G
167Vpeak
Philips T5 Fluorescent BALLAST
10Turns
Ignition Transformer
VDE0108
DR12
ICB2FL02G
L101
ballast design equation for 54w tube
rm5 inductors
lvs1
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ballast 54W
Abstract: ballast design equation for 54w tube ICB2FL01G ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC Epcos 100nF 250V RM10 Ignition Transformer R402 VDE0108 Lighting Standards ballast circuit diagram for 54w tube
Text: Datasheet V1.2 May 2010 ICB2FL01G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com IFAG IMM API SPI AC TM N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts ICB2FL01G
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ICB2FL01G
167Vpeak
ballast 54W
ballast design equation for 54w tube
ICB2FL01G
ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
Epcos 100nF 250V RM10
Ignition Transformer
R402
VDE0108
Lighting Standards
ballast circuit diagram for 54w tube
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Untitled
Abstract: No abstract text available
Text: Datasheet V1.2 May 2010 ICB2FL01G Smart Ballast Control IC for Fluorescent Lamp Ballasts Published by Infineon Technologies AG http://www.infineon.com IFAG IMM API SPI AC TM N e v e r s t o p t h i n k i n g 2nd Generation FL-Controller for FL-Ballasts ICB2FL01G
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ICB2FL01G
167Vpeak
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5R10
Abstract: No abstract text available
Text: DCIDC Convcrtera AC/DC Inverters Am'Malfinger Steig 86920 Denklingen Germany Delay-Lineo Purselransformers 0g243-9693-0 current se'ae ftodules Tel: Fax: 0g243-9693-33 Voltage Sen6e llodules Programmable Delay Line TTL . Logic'tYP FL,L' E ,-'-l fir ftftltELIriL-, ,\tU, IIL
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0g243-9693-0
0g243-9693-33
-550C-
l00pA
1000ns
5R10
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IA-EM02A
Abstract: CAS-10093 ccfl bit inverter ccfl driver T6963C EU-002A
Text: EXAMINED BY : FILE NO . EMERGING DISPLAY APPROVED BY: ISSUE : CAS-10093 JAN.24,2000 TOTAL PAGE : TECHNOLOGIES CORPORATION VERSION : CUSTOMER ACCEPTANCE MODEL SPECIFICATIONS NO . : 24B00 C C FL TY PES FOR MESSRS : CUSTOMER'S APPROVAL : _
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CAS-10093
24B00
IA-EM02A
IA-EM02A
CAS-10093
ccfl bit inverter
ccfl driver
T6963C
EU-002A
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KSR1002
Abstract: TRANSISTOR ksR1002 KSR2002
Text: SAMSUNG SEM ICONDUCTOR INC T V ^ S - ljlM E KSR1002 D | 7=11,4142 0007017 fl NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • S w itching c ircuit, Inverter, Interface c irc u it Driver circuit • B u ilt in bias Resistor (R ^ IO K fl, R; = 1 0 K ll)
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KSR1002
KSR2002
TRANSISTOR ksR1002
KSR2002
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Untitled
Abstract: No abstract text available
Text: KSR2014 PNP EPITAXIAL SILICON TRAN SISTO R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R,«4.7kQ, R ^ T k fl) • Complement to KSR1014 ABSOLUTE MAXIMUM RATINGS (TA=25t:)
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KSR2014
KSR1014
-10mA,
-100/iA
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J3005
Abstract: KSR1209 KSR2209
Text: SAMSUNG SEMICONDUCTOR INC-*p3Srft 1ME 0 17=^4142 000707^ fl | KSR1209 NPN EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7KQ) • Complement to KSR22Q9
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KSR1209
KSR2209
O-92S
J3005
KSR2209
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transistor wr2
Abstract: No abstract text available
Text: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1
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RN4606
961001EAA2'
transistor wr2
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Untitled
Abstract: No abstract text available
Text: UT54ACS04/UT54ACTS04 Radiation-Hardened Hex Inverters FEATURES • 1.2|i radiation-hardened CMOS - Lgtchup immune • Highspeed • Low power consumption • Single 5 volt supply • Available QML Q or V processes • Flexible package - 14-pin DIP - 14-lead fl&tpack
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UT54ACS04/UT54ACTS04
14-pin
14-lead
UT54ACS04
UT54ACTS04
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buv48
Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Text: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique
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15A3DIN
buv48
BC 171 NPN transistor
transistor buv
transistor bc 237c
BUV 76
BUV48I
transistor BUV 92
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W
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OT-323
0535b05
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Untitled
Abstract: No abstract text available
Text: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Buill In • Switching circuit, Inverter, Interface circuit Driver circuit SOT-23 • Built in bias Resistor(R ,=2.2K ß, R2= 47 K fl) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2113
OT-23
KSR1113
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=1 kil, R2=1 kfl FL BCR 521 XVs Pin Configuration Q62702-C2355 1 =B Package o II CO Marking Ordering Code LU II <\J
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Q62702-C2355
OT-23
a235bOS
BS35bOS
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Untitled
Abstract: No abstract text available
Text: RN1610,1611 RN1610 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm + 0.2 fl-o.S DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN1610
RN1610)
RN2610
RN2611
RN1611
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Untitled
Abstract: No abstract text available
Text: RN4601 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl 1 Unit in mm + 0.2 2 .8 -0 .3 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 1.6 - 0 .1 •
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RN4601
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