FL23T Search Results

BF 857 TRANSISTORS

Abstract: 881 bf BF881
Contextual Info: SIEMENS/ SPCLn SEMICONDS jjlT fc fl23ti3S0 0 0 1 4 5 m -f-33 3 J - Transistors —bipolar T ra n sisto rs for high voltages V ideo tran sisto rs P la stic p acka g e T O 202 N V^CEO = P Vcbo* lc P.oi V mA mW /cBO ^C E sat /c e f i * V cE s a tH F * V nA V

Contextual Info: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation

Contextual Info: SIEMENS KOM 2085 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Transparent Schematic K A2o-t¡l-to-oA1 A3o-C+- -KJ-o A4 FEA TU RES Characteristics, Single Segment TA=25°C, std. light A, T=2856 K * Silicon Photodiode in Planar Technology

Contextual Info: SIEMENS DL3416 .225" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display With Memory/Decoder/Driver Preliminary Date Sheet Package Dimensions in Inches mm ( 15.24) pin 1 indicator part no. EIA date code intensity code FEATURES nmmnnn

Contextual Info: 32E D • 02 3b 32G 001bñ43 7 ■ NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SIP BFN16 BFN18 T - 3 Í- 2 3 SEMICONDS . • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

LD275 led

Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surfacs not flat 0 2 4 (0 6) 0 1 6 (0 4) 2 2 4 (5 7) 2 0 0 (5 1) 031 (0 6) 0 1 6 (0 4) Í \ 0 7 1 (1 8 ) 200 (5 1) 189 (4 8) T r~ Calhode 307 (7 8) * 295 (7 5) 047(1 2) 1 140(29) t 061 (27)

Contextual Info: SIEMENS SFH 263 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm .071 (1.8) .047 t u Ÿ .100 CNp Position .024 (0.6) .016(0 4) (» 4 ) .031 <p.í)_ .020 (0.4) -J .232(59) .216 (5.5) ,020(0.5) r 0.200(5.1) t -H 0 .189( 4.8) .151(385)

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

Contextual Info: SIEMENS CMPNTS-, OPTO 44E ]> • ! fl53b35b 0004721 b M S IE X DL 1814 SIEM ENS T -H /-? ? Package Dimensions in Inches mm FEATURES • 0.112" x 0.088" Magnified Monolithic Character • Rugged Solid Plastic Encapsulated Package • Wide Viewing Angle ±40°, Both Axis

diode t25 4 e0

Abstract: 0QQ7477
Contextual Info: SIEMENS SFH 4446 TRANSCEIVER OPTICAL MODULE Package Dimensions in mm FEATURES Maximum Ratings • Bidirectional Module with Integrated WDM Output power ratings reter to the SM fiber output. The operating temperature of the submount is identical with the case temperature.

S10K625

Abstract: S10K250 S10K275 Siemens varistor
Contextual Info: SIEMENS/ SPCLt SENICONDS ~ aa 0 2 3 bBHD 0 0 1 4 5 2 7 û ~ 7 -c / / - X - / SIOV’s Metal Oxide Varistors for Transient Suppression Features: □ Nanosec. Switching Response Time, < 15 nsec. with minimal lead length. □ HlghTransient Current Capability(up

Contextual Info: SFH 4413 SIEMENS LOW POWER LASERDIODE IN T 018 PACKAGE Package Dimensions in mm 20 S p a c in g FEATURES Maximum Ratings • InGaAsP/lnP MCRW -Laser Diode Output power ratings refer to the total em itted power at front window. The operating tem perature of the subm ount is identical with the case