FL53SBQS Search Results
FL53SBQS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3da92Contextual Info: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture |
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GDS3414 33-MHz 27-Gbit/s 3da92 | |
TAE 4453 AContextual Info: bOE ]> • ö23SbDS D O M W O SIEMENS Ô23 H S I E â SIEMENS AKTIENGESELLSCHAF T Quad PNP Operational Amplifier • • • • • • ? '0 7 - ^ o TAE 4453 TAF 4453 Features • • • • " 7 Bipolar 1C Supply voltage range between 3 V and 36 V Low current consumption, 1,6m A typ. |
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23SbDS fl53SbQS TAE 4453 A | |
Contextual Info: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information |
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64-Bit 72-Bit 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 168pin E3Sb05 fl23SbOS | |
Contextual Info: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3 |
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BSP171P P-SOT223-4-1 Q67041-S4019 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
sab80186
Abstract: SAB 80186
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16-Bit 0235bDS G03D7bE fl235b05 SAB80186 sab80186 SAB 80186 | |
diode 351
Abstract: SIPMOS N-channel
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535b05 C67078-A3103-A2 as35b0s A235b05 001SQ31 diode 351 SIPMOS N-channel | |
6-BTContextual Info: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 |
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Q62702-A1017 OT-143 flS35bOS 6-BT | |
Contextual Info: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II |
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Q62702-C2338 OT-23 300ns; D1S0773 D1HG77H fl53SbQS |