FLANGE RF RESISTOR 50 Search Results

RFC-5050

Abstract: 50W 50 ohm termination RFD-3050 RFD-5450 RFC-30 RFC 08 RFD-5550
Contextual Info: Lead Free RF SOLUTION – NIKKOHM MICROWAVE TERMINATIONS RFC, RFD RFD RFC Feature and Applications RF and microwave termination with 50ohm and 75 ohm characteristic impedance. RFD for coaxial applications and RFC for flange RF resistor and termination. Ni-Cr thin film and alumina substrates realize long life and temperature stability.

Contextual Info: FLANGED RF POWER TERMINATOR RESISTOR Custom solutions are available. HOW TO ORDER FRFPT 100- 50 F Y B Package Type B = 100 pieces Bulk TCR Y = ±50ppm FEATURES Resistance Tolerance F = ±1% G = ±2% J = ±5 RF and microwave resistors of 50 to 80Ω have flange

Contextual Info: PA1076 1850-1910 MHz. Ultra Linear Amplifier 'iwo/mr M/C/?OmVECotp. Typical Performance Curves -0°C +25°C - A — +85°C See Short Form Chart and Mechanical Section for available outline drawings Pin 1=RF In, Pin 2=Resistor, Pin 3=RF Out, Flange=Ground Features: typical values

PTB32003X

Contextual Info: PTB32003X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32003X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B E • Diffused Emitter Ballasting Resistor • Hermetic Flange Package

10x smd resistor

Abstract: 100W high power resistor RPH-10B heat sink to220 resistor 270 ohm diode 8889 TO220 RHP-100E high power diode 500v POwer resistor 0,25 100w resistor 220 1W
Contextual Info: HIGH POWER RESISTOR – 20W to 140W The content of this specification may change without notification 12/07/07 Custom solutions are available. HOW TO ORDER FEATURES RHP-10A-100 F Y R ƒ ƒ ƒ ƒ ƒ ƒ ƒ Packaging 50 pieces T = tube or R= tray (flanged type only)

10W 6.8 ohm k ceramic resistor

Abstract: 100 ohm, 10W resistor flange RF resistor 50 flange RF termination 50 50W 50 ohm termination resistor 2.2 K Ohm resistor 1 k ohm RF Resistor 75 OHM RFTF250
Contextual Info: RF SOLUTIONS - WILLOW TECHNOLOGIES LTD FLANGED TERMINATIONS RFTF Features and Applications RF and microwave termination of 50ohm have flange cooling. Low return loss, long life and temperature stability a result of Ni-Cr thin film and super heat conductive

TC2996D

Abstract: GaAs FET chip GRM39Y5V104Z25V
Contextual Info: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

flange RF resistor 50

Abstract: Rod Resistors
Contextual Info: Introduction Resistors Features • Lead Free, RoHS Compliant Option Available • Low Capacitance • Mounting - Surface Mount, Tab & Cover, Flange, and Rod • Power Levels: 0.05 to 800 watts • 50 & 100 Ohms standard • Tuned Circuit • Available in AlN, BeO, or Alumina

flange RF resistor 50

Abstract: 10W 6.8 ohm k ceramic resistor Stripline Flange Terminations 800OHM 248hc
Contextual Info: RF SOLUTIONS - WILLOW TECHNOLOGIES LTD Lead Free FLANGED POWER RESISTORS RFRF Features and Applications RF and microwave resistors of 50 to 800ohm have flange cooling, also applicable for terminations in strip-line circuits. Long life and temperature stability are a result of Ni-Cr thin film and super heat conductive ceramic

flange RF resistor 50

Abstract: resistor 270 ohm 150 ohms resistor AL203 100 ohm resistance flange RF termination 50 CHF190104xBF
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 12.5, 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104xBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

TQP770001

Contextual Info: TQP770001 Advance Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and

unisem QFN

Abstract: TQP770001 MO-220 QFN 8 CARSEM
Contextual Info: TQP770001 Preliminary Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and

jedec package MO-220 QFN 20

Abstract: MO-220 TQP770001 resistor 220 Ohm
Contextual Info: TQP770001 Preliminary Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 IM335 resistor 33k ohms
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

flange RF resistor 50

Contextual Info: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

flange RF resistor 50

Abstract: 190104
Contextual Info: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

Contextual Info: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

br cornell dubilier

Contextual Info: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down

roger

Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and

Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at

DS 469 ADJ

Abstract: type 103 capacitor, 2kv RF
Contextual Info: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device