FLASH 512KX16 Search Results

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F800SG 8M 512Kx16 Smart Voltage

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work

Contextual Info: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

smd code F18

Contextual Info: ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM • Access Times of 25ns SRAM and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)

Contextual Info: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  100,000 Erase/Program Cycles  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture  Packaging

Contextual Info: WPSF2816G-27PJX M/HITE /MICROELECTRONICS 2Mbit of SRAM & 8Mbit of FLASH 128Kx16 SRAM/512Kx16 FLASH MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 20ns S R A M ■ 100,000 Erase/Program Cycles ■ A ccess Tim es of 70ns (Flash) ■ Secto r Architecture

Contextual Info: a WSF512K16-XXX WHITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 35nS SR A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A cce ss Tim es of 70nS (SR A M ) and 120nS (FLASH) ■

Contextual Info: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 64K bytes each

Contextual Info: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: TT WSF512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH M E M O R Y FEATURES • Access Tim es o f 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH) ■ S ector A rchitecture

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: ACT–SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com FEATURES • 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in ■ Packaging – Hermetic Ceramic One MCM ■ Access Times of 25ns SRAM and 60ns (Flash) or

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ TTL Compatible Inputs and Outputs „ Access Times of 70ns (SRAM) and 120ns (FLASH) „ Built-in Decoupling Caps and Multiple Ground Pins

FD11O

Contextual Info: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)

WSF2816-39G2UX

Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Contextual Info: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM „ 512Kx16 5V FLASH „ Organized as 128Kx16 of SRAM and 512Kx16 of

Contextual Info: A82DL32x8T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8M 512Kx16 Bit) SUPER RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32

Contextual Info: A82DL32x8T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8M 512Kx16 Bit) SUPER RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32

A82DL3228TG-70I

Abstract: A82DL3238U
Contextual Info: A82DL32x8T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8M (512Kx16 Bit) SUPER RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SUPER RAM, A82DL32x8T(U) 32

EM39LV800

Abstract: xx55
Contextual Info: EM39LV800 8M Bits 512Kx16 Flash Memory SPECIFICATION General Description The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 µsec and a

Contextual Info: a WHITE /MICROELECTRONICS WPSF2816G-27PJX 2M bit of SRAM & 8M bit of FLASH 128KX16 SRAM/512KX16 FLASH MODULE ADVAN CED* FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 20ns SRAM ■ 100,000 B a se /P ro g ra m Cycles ■ A ccess Tim es of 70ns (Rash)