Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLM1314 Search Results

    FLM1314 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FLM1314-12F
    		Eudyna Devices X, Ku-Band Internally Matched FET Original PDF 310.49KB 4
    FLM1314-12F
    		Fujitsu FET, P Channel, ID 10 A Original PDF 120.99KB 4
    FLM1314-18F
    		Eudyna Devices X,Ku-Band Internally Matched FET Original PDF 112.17KB 5
    FLM1314-3F
    		Eudyna Devices X, Ku-Band Internally Matched FET Original PDF 311.07KB 4
    FLM1314-3F
    		Fujitsu FET, P Channel, ID 2.1 A Original PDF 98.22KB 4
    FLM1314-6F
    		Eudyna Devices X, Ku-Band Internally Matched FET Original PDF 302.72KB 4
    FLM1314-6F
    		Fujitsu FET, P Channel, ID 4.2 A Original PDF 95.65KB 4
    FLM1314-8F
    		Eudyna Devices X, Ku-Band Internally Matched FET Original PDF 304.09KB 4
    FLM1314-8F
    		Fujitsu FET, P Channel, ID 5.9 A Original PDF 106.54KB 4

    FLM1314 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-12F FLM1314-12F FCSI0500M200 PDF

    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F -65hods PDF

    Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-12F -45dBc FLM1314-12F 25hods PDF

    Contextual Info: FLM1314-6F -FEATURES • • • • • • X, Ku-Band Internally Matched FET High Output Power: P ^ b = 37.5dBm Typ. High Gain: = 5.5dB (Typ.) High PAE: r!add = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz


    OCR Scan     		FLM1314-6F FLM1314-6F FCSI0598M200 PDF

    FLM1314-6F

    Abstract: tel 1145 319
    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F Di4888 tel 1145 319 PDF

    S465A

    Abstract: FLM1314-18F ED-4701
    Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		FLM1314-18F FLM1314-18F 25ong, S465A ED-4701 PDF

    FLM1314-6F

    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F FCSI0598M200 PDF

    ED-4701

    Abstract: FLM1314-18F RM-1101
    Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: add=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50 ・Hermetically Sealed Package DESCRIPTION


    Original     		FLM1314-18F FLM1314-18F ED-4701 RM-1101 PDF

    74 292

    Abstract: FLM1314-8F FLM1314
    Contextual Info: FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-8F -45dBc FLM1314-8F Tempe4888 74 292 FLM1314 PDF

    FLM1314-12F

    Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-12F -45dBc FLM1314-12F 17serve FCSI0901M200 PDF

    Contextual Info: FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-8F -45dBc FLM1314-8F PDF

    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F FCSI0598M200 PDF

    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F PDF

    Contextual Info: FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-8F -45dBc FLM1314-8F PDF

    FLM1314-3F

    Abstract: fujitsu gaas fet
    Contextual Info: FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-3F -45dBc FLM1314-3F FCSI0499M200 fujitsu gaas fet PDF

    IM324

    Abstract: FLM1314-6F
    Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		FLM1314-6F FLM1314-6F FCSI0598M200 IM324 PDF

    145GHz

    Contextual Info: FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-3F -45dBc FLM1314-3F 145GHz PDF

    Contextual Info: FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1314-3F -45dBc FLM1314-3F FCSI0499M200 PDF

    FLM1314

    Abstract: 900MA
    Contextual Info: FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-3F -45dBc FLM1314-3F FCSI0499M200 FLM1314 900MA PDF

    Contextual Info: FLM1314-3F X, Ku-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 35.0dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm • Broad Band: 13.75 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1314-3F -45dBc FLM1314-3F FCSI0499M200 PDF

    FLM1314-8F

    Contextual Info: FLM1314-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-8F -45dBc FLM1314-8F FCSI0601M200 PDF

    FLM1314-12F

    Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1314-12F -45dBc FLM1314-12F PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF