FLR016 Search Results

FLR016FH

Contextual Info: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for

et 1103

Abstract: Flr016xp
Contextual Info: FLR016XP, F LR 016X V GaAs F ET a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current Test Conditions ID SS - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -4 - - V 19 20 - dBm 7.0 8.0 - dB - 25 - % 19 20 -

Contextual Info: FLR016FH K - B a n d Power GaAs FE i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Condition Item Rating Unit Drain-Source Voltage vds 12 V Gate-Source Voltage vgs -4 V 1.0 w °c °c 1013! rO W B i UtSSipflwlOit Tc = 25°C Pt Storage Temperature

Contextual Info: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)

FLR016FH

Abstract: fujitsu gaas fet
Contextual Info: FLR016FH K-Band Power GaAs FETs FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.5dB(Typ.) N• High PAE: hadd = 26%(Typ.) O T • Proven Reliability REC OM DESCRIPTION ME FET that is designed for The FLR016FH chip is a power GaAs N

FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5

Flr016xp

Abstract: FLR016XV GaAs FET HEMT Chips
Contextual Info: FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) NOT Drain G1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: hadd = 25%(Typ.)(FLR016XP) REC OM Source hadd = 26%(Typ.)(FLR016XV)

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

FLR024FH

Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH