FHX05X Search Results

FHX05X Price and Stock

Filter by Manufacturer


YAGEO Corporation FHX05X INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	FHX05X		2,920			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others FHX05X INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	FHX05X		185			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FHX05X Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FHX05X		Eudyna Devices	TRANS JFET 3.5V		Original	PDF	54.85KB	4
FHX05X		Fujitsu	FET, P Channel, ID 0.06 A		Original	PDF	57.8KB	4
FHX05X		Unknown	FET Data Book		Scan	PDF	103.5KB	2
FHX05X-E1		Fujitsu	IC FET MISC GAAS FET AND HEMT CHIPS		Original	PDF	57.8KB	4

FHX05X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FHX04X Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X FHX04 FHX05X GaAs FET HEMT Chips hemt low noise die	PDF
FHX04 Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X GaAs FET HEMT Chips hemt low noise die	PDF
FHX04 Abstract: FHX04X FHX05X FHX06X hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X hemt low noise die	PDF
hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) 12GHz FHX06X 2-18GHz hemt low noise die	PDF
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low N o ise F igure: 0.7 5 d B T y p . @ f= 1 2 G H z (F H X 04) H igh A s s o c ia te d G ain: 1 0.5d B (T yp .)@ f= 1 2 G H z Lg s 0.25\|iim , W g = 200\|iim G old G a te M e ta lliz a tio n fo r H igh R e lia b ility	OCR Scan	FHX04X, FHX05X, FHX06X FCSI0598M200	PDF
GaAs FET HEMT Chips Abstract: S2V 15 Contextual Info: F H X 0 4 X , FHX05X, FHX06X GaAs FET & HEMT Chins ELECTRICAL CHARACTERISE CS Amb ient Temperature Ta=25°C Item Test Conditions Symbol Transconductance 9m VDS = 2V, Id s = 10mA 15 35 Pinch-off Voltage vp vd s = 2V, ids = 1mA -0.2 Saturated Drain Current	OCR Scan	FHX05X, FHX06X FHX06X FHX05X FHX04X 12GHz GaAs FET HEMT Chips S2V 15	PDF
FLC301XP Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5	OCR Scan	FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151	PDF
Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz	PDF
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA	PDF
FHX04X Abstract: fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FHX06X FET transistors with s-parameters FUJITSU AU GM 90 562 573 Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FET transistors with s-parameters FUJITSU AU GM 90 562 573	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF