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FUJITSU Limited FLU10XMT Electronic Component
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ComSIT USA	FLU10XMT		167			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLU10XM Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FLU10XM		Eudyna Devices	L-Band Medium & High Power GaAs FET		Original	PDF	78.2KB	4
FLU10XM-E1		Fujitsu	FET: P Channel: ID 0.45 A		Original	PDF	78.05KB	4

FLU10XM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM FCSI0598M200	PDF
FLU10XM Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM V4888	PDF
FLU10XM Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM FCSI0598M200	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM	PDF
FLU10XM Contextual Info: FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-\|C\|g=29.5dBnn Typ. High Gain: G-\|C\|g=14.5dB (Typ.) High PAE: riadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available	OCR Scan	FLU10XM FLU10XM FCSI0598M200	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM FCSI0598M200	PDF
Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM	PDF
FLU10XM Abstract: FLU10 Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the	Original	FLU10XM FLU10XM VGS794 FLU10	PDF
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan		PDF