FLU10ZM Search Results

Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE

FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE

Contextual Info: FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm typ. High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This is a new product

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.