FM24C04P Search Results

FM24C04P Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FM24C04-P		Ramtron International	4Kb FRAM Serial Memory		Original	PDF	423.27KB	13
FM24C04-P		Ramtron International	4Kb FRAM serial memory. 5V operation		Original	PDF	84.21KB	13
FM24C04-P		Ramtron International	4Kb FRAM Serial Memory		Scan	PDF	749.61KB	13
FM24C04-P		Ramtron International	4Kb FRAM Serial Memory		Scan	PDF	596.76KB	13
FM24C04-P		Ramtron International	4Kb FRAM Serial Memory		Scan	PDF	1MB	13

FM24C04P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FM24C04 4Kb F RAM ^ R a M lR O N Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process	OCR Scan	FM24C04 FM24C04	PDF
Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM24C04 FM24C04	PDF
FM24C04 Abstract: FM24C04-P FM24C04-S MS-001 Contextual Info: FM24C04 ^ R3M TRO N 4Kb I RA M Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process	OCR Scan	FM24C04 FM24C04 MS-001 MS-001 FM24C04-P FM24C04-S	PDF
FM24C04 Abstract: 1E10 FM24C04-P FM24C04-S FM24C64 Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • No write delay • Advanced high-reliability ferroelectric process	Original	FM24C04 FM24C04 1E10 FM24C04-P FM24C04-S FM24C64	PDF
Contextual Info: FM24C02/04 1 /08(2)/16 2-Wire Serial EEPROM Data Sheet May. 2008 Note: 1. FM24C04 not recommend for new design, please refer to FM24C04A datasheet. 2. FM24C08 not recommend for new design please refer to FM24C08A datasheet. Data Sheet FM24C02/04/08/16 2-wrie Serial EEPROM	Original	FM24C02/04 FM24C04 FM24C04A FM24C08 FM24C08A FM24C02/04/08/16	PDF
FM24C04 Abstract: FM24C04-P FM24C04-S FM24C64 Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM24C04 FM24C04 nonvola50 FM24C04-P FM24C04-S FM24C64	PDF
FM24C04 Abstract: FM24C04-P FM24C04-S FM24C64 Contextual Info: FM24C04 4Kb FRAM Serial Memory Features Low Power Operation • 5V operation • 150 µA Active Current 100 kHz • 10 µA Standby Current 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion (1010) Read/Writes	Original	FM24C04 FM24C04 FM24C04-P FM24C04-S FM24C64	PDF
Contextual Info: FM24C02/04/08 A /16 2-Wire Serial EEPROM Data Sheet Dec. 2006 Data Sheet FM24C02/04/08(A)/16 2-wrie Serial EEPROM Version 2.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO	Original	FM24C02/04/08	PDF
FM24CO4 Abstract: FMZ4C04 FM24C04-S 1E10 FM24C04 FM24C04-P FM24C64 FM24CQ4 Contextual Info: FM24C04 R a M T R O N 4Kb F RAM Serial Memory Features Low Pow er O peration 4K bit Ferroelectric N onvolatile RAM • True 5V operation • Organized as 512 x 8 bits • 150 fiA Active current 100 kHz • High endurance 10 Billion (1010) read/writes •	OCR Scan	FM24C04 FM24C04 FM24CO4 FMZ4C04 FM24C04-S 1E10 FM24C04-P FM24C64 FM24CQ4	PDF
EM24C04 Abstract: 1E10 FM24C04 FM24C04-P FM24C04-S Contextual Info: FM24C04 4Kb I RA M ^ R aM T R O N Serial M em ory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process	OCR Scan	FM24C04 FM24C04 EM24C04 1E10 FM24C04-P FM24C04-S	PDF
Contextual Info: FM24C02/04/08 A /16 2-Wire Serial EEPROM Data Sheet May. 2007 Data Sheet FM24C02/04/08(A)/16 2-wrie Serial EEPROM Version 2.2 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO	Original	FM24C02/04/08	PDF
e1 fram Abstract: 1E10 FM24C04 FM24C04-P FM24C04-S MS-001 Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process	Original	FM24C04 FM24C04 MS-001 e1 fram 1E10 FM24C04-P FM24C04-S	PDF
1E10 Abstract: FM24C04 FM24C04-P FM24C04-S Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process	Original	FM24C04 FM24C04 1E10 FM24C04-P FM24C04-S	PDF