FM24VN10 Search Results

FM24V10-G

Abstract: FM24VN10-G megabit FM24V10 FM24VN10 AEC-Q100-002 FM24V10G
Contextual Info: Pre-Production FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24v10-g

Abstract: fm24vn10-g RIC1011 FM24V10G
Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fram i2c

Abstract: fm24v10 FM24V10-G
Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24VN10

Abstract: FM24V10 FM24V10-GTR
Contextual Info: Preliminary FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V10 1-Mbit 128 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

FM24V10

Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface