FM25160
Abstract: 1E10 FM25040 FM25160-P FM25160-S MS-001
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process
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Original
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PDF
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FM25160
FM25160
16-kilobit
MS-001
1E10
FM25040
FM25160-P
FM25160-S
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Untitled
Abstract: No abstract text available
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM25160
FM25160
16-kilobit
MS-001
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1E10
Abstract: FM25040 FM25160 FM25160-P FM25160-S MS-001
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process
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Original
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PDF
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FM25160
FM25160
16-kilobit
MS-001
1E10
FM25040
FM25160-P
FM25160-S
|
FM25040
Abstract: FM25160 FM25160-P FM25160-S MS-001 5C260
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
|
PDF
|
FM25160
FM25160
16-kilobit
MS-001
FM25040
FM25160-P
FM25160-S
5C260
|
fm25160s
Abstract: No abstract text available
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process
|
Original
|
PDF
|
FM25160
FM25160
16-kilobit
FM25160-P
FM25160-S
545-FRAM,
fm25160s
|
Untitled
Abstract: No abstract text available
Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM25160
FM25160
16-kilobit
MS-001
|
Untitled
Abstract: No abstract text available
Text: FM25160 16Kb F R A M 6 R 3 M 1 R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process
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OCR Scan
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PDF
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FM25160
FM25160
16-kilobit
|
1E10
Abstract: FM25040 FM25160 FM25160-P FM25160-S opcoa
Text: FM25160 6 R 3 M 1 R O N 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process
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OCR Scan
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PDF
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FM25160
FM25160
16-kilobit
nonvola25160
MS-001
1E10
FM25040
FM25160-P
FM25160-S
opcoa
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