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    FM25VN10 Search Results

    FM25VN10 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FM25VN10-G
    Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 40MHZ 8SOIC Original PDF 24
    FM25VN10-GTR
    Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 40MHZ 8SOIC Original PDF 24
    FM25VN10-GTR
    Cypress Semiconductor Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 40MHZ SPI 8SOIC Original PDF 24

    FM25VN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FM25V10

    Abstract: FM25V10-G FM25VN10 25VN10
    Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) 25VN10 A6340282A RIC0824 FM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25V10-G FM25VN10 25VN10 PDF

    Contextual Info: FM25V10 1-Mbit 128 K x 8 Serial (SPI) F-RAM 1-Mbit (128 K × 8) Serial (SPI) F-RAM Features Functional Overview • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original
    FM25V10 151-year FM25V10 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    FM25V10

    Abstract: fm25v10-g FM25V fm25v10g fm25vn10-g
    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) TemperaFM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25V10 FM25V fm25v10g PDF

    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) T9/2008 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR PDF

    FM25VN10-G

    Abstract: FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v
    Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR FM25VN10-G FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v PDF

    FM25V10-G

    Abstract: fm25v10
    Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) FM25V10 FM25V10-G FM25VN10-G FM25V10-GTR FM25VN10-GTR PDF

    Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    FM25V10 FM25VN10) FM25V10, 340282A, 25V10 A6340282A RIC0824 25VN10 PDF

    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original
    FM25V10 FM25VN10) PDF

    fm25v10

    Abstract: cypress flash 370
    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original
    FM25V10 FM25VN10) fm25v10 cypress flash 370 PDF