FMM5806X Search Results
FMM5806X Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| FMM5806X |
|
24-27.0 GHz Power Amplifier MMIC | Original | 952.52KB | 4 |
FMM5806X Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
|
Original |
FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic | |
fujitsu power amplifier GHzContextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology |
Original |
FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz | |
FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
|
Original |
FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic | |
|
Contextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology |
Original |
FMM5806X 26dBm FMM5806X |