J202 equivalent
Abstract: No abstract text available
Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current
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FMMJ201
J202 equivalent
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J203
Abstract: No abstract text available
Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS P A R T M A R K IN G D E T A IL S : FM M J201 - POI FM M J202 - PO2 FM M J203 - PO3 F M M J204 - PO4 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or G ate-S ource V oltag e Notes
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FMMJ201
DS168
J203
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bss170
Abstract: No abstract text available
Text: SOT23 'If SMALL SIGNAL MOSFETS SOTFETs Pinout : 1-Drain, 2-Source, 3-Gate Type b mA BV qss V !DM A PD mW V GE;<th) M in/M ax at lD V mA RDS(on) a at Max mA to V GS V 10 N-CHANNEl ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68 360 0.8/2.8
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ZVN3320F
BSS123
BSS123A
ZVN3310F
BST82
ZVN4106F
ZVN3306F
FMMJ4391
FMMJ4392
FMMJ4393
bss170
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bss170
Abstract: BSS170F MJ174
Text: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68
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ZVN3320F
BSS123
BSS123A
ZVN3310F
BST82
ZVN4106F
ZVN3306F
2N7002
VN10LF
BSS170F
bss170
MJ174
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