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    Pentair Equipment Protection - Hoffman CCFO1024

    INVER.MODULAR CABLE ENT 10-24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCFO1024 Bulk 1
    • 1 $33.2
    • 10 $33.2
    • 100 $33.2
    • 1000 $33.2
    • 10000 $33.2
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    JST Manufacturing CDS-SFO10-250N-CMKS-L

    APPLIC/DIE SET FOR IND STD PRESS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDS-SFO10-250N-CMKS-L Bulk 1
    • 1 $6063.74
    • 10 $6063.74
    • 100 $6063.74
    • 1000 $6063.74
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    nVent Hoffman CCFO1024

    Outer Gland Plate, 10 Cable Entry; Accessory Type:Outer Gland Plate; For Use With:Nvent Hoffman 10/24 Cable Entry Industrial Enclosures; Product Range:Ccfo Series Rohs Compliant: Yes |Nvent Hoffman CCFO1024
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark CCFO1024 Bulk 1 1
    • 1 $31.2
    • 10 $28.6
    • 100 $28.6
    • 1000 $28.6
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    ILME UK Ltd CFO 10.29

    Enclosure: for HDC connectors; C-TYPE; size 57.27; high; PG29
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CFO 10.29 20
    • 1 -
    • 10 -
    • 100 $9.77
    • 1000 $9.77
    • 10000 $9.77
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    ILME UK Ltd CFO 10.21

    Enclosure: for HDC connectors; C-TYPE; size 57.27; high; PG21
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CFO 10.21 20
    • 1 -
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    • 100 $9.77
    • 1000 $9.77
    • 10000 $9.77
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    FO102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE NM

    Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
    Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is


    Original     		PDF MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes

    smd-transistor DATA BOOK

    Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
    Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance


    Original     		PDF MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    NE56755

    Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    PPC5001T

    Abstract: PQC5001T
    Text: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.


    OCR Scan     		PDF 7-33-Q5 PPC5001T PQC5001T 711Dfl2b 004bi PQC5001T T-33-05 711002b

    Untitled

    Abstract: No abstract text available
    Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B


    OCR Scan     		PDF 001fc PTB23001X PTB23003X PTB23005X FO-41B PTB32001X PTB32003X PTB32005X

    7Z8G

    Abstract: FO-85 transistor qz PPC5001T PQC5001T
    Text: N AMER P H I L I P S / D I S C R E T E OL.E D • L t . S 3 cI B l OQISCHS 5 PPC5001T PQC5001T T-ZZ-Otr • ' • -* S" ' -i . MICROWAVE POWER TRANSISTORS - N-P-N silicon power transistor for use in a common-collector oscillator circuits in military and professional applications,


    OCR Scan     		PDF PPC5001T PQC5001T bbS3T31 T-33-Ã 10\A-. 7Z94257 7Z8G FO-85 transistor qz PQC5001T

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bb53T31 001SCH5 2 PPC5001T PQC5001T T - 3 .3 - 0 ^ MICROWAVE POWER TRANSISTORS N-P-N silicon power transistor for use in a common-collector oscillator circuits in military and professional applications. : ' . . . . The transistors operate in c.w.-conditions and are recommended for applications up to 8 GHz.


    OCR Scan     		PDF bb53T31 001SCH5 PPC5001T PQC5001T bbS3131 T-33-0<

    FO-102

    Abstract: ODU microwave PZB16050U
    Text: 70 RF/Microwave Devices M icrow ave Transistors, Continuous Power Package Outline Pi 111 _ Type No. cont. f (GHz) Gp (dB) (%) 8 8.5 8 7 6.8 7 5.6 6 7 45 45 45 45 35 35 35 35 40 tie CLASS B, HIGH POWER (cont.) PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U


    OCR Scan     		PDF PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U PZ1721B25U PZ2024B10U PZ2024B20U PZ2327B15U FO-57C FO-102 ODU microwave

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


    OCR Scan     		PDF PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X

    PQC5001T

    Abstract: PPC5001T FO-102
    Text: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.


    OCR Scan     		PDF PPC5001T PQC5001T 711002b 00Mb422 PPC5001T PQC5001T T-33-05 711065b FO-102