FOR 1 160V 379 Search Results

1RF9630

Abstract: Diode SMD SJ 65a smd A9A IRF9630 ts65a Diode SMD SJ 05 rd152 A9A smd S65A
Contextual Info: PD-9.352F International XORRectifier IRF9630 HEXFET Pow er M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - "200V ^DS on = 0 -8 0 Q iD = -6.5A

ZXTN5551FL

Abstract: TS16949 ZXTP5401FL
Contextual Info: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating

b 1185

Contextual Info: IRLW/I610A Advanced Power MOSFET FEATURES BVdss = 200 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 MA Max. @ VDS= 200V

fss230

Abstract: S230D
Contextual Info: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

Contextual Info: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage

Contextual Info: REA Aluminum Electrolytic Capacitors CE04 Type Features •85°C, 2000 ~ 3000 hours assured •Standard series for general purpose SPECIFICATIONS Items Performance Operating Temperature Range -40℃ ~ +85℃ Capacitance Tolerance Rated voltage ≦100V after 2 minutes

complementary npn-pnp

Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER

FZT757

Abstract: 200V 100MA NPN t6757 FZT657
Contextual Info: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757

Contextual Info: RMV ALUMINUM ELECTROLYTIC CAPACITORS 105 ℃, Sub-miniature, Radial Leads SERIES ▣ Features § § § § 105℃ , Sub-miniature, Radial Wide Operating Temperature Range High CV Smaller than RMU Load Life of 1000 hours at 105℃ ▣ Specifications Item Performance Characteristics

smd diode marking JC

Abstract: AN-994 IRF9630S SMD-220 smd diode marking JJ
Contextual Info: International S Rectifier PD-9.920 IRF9630S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s =-200V R DS on = 0 - 8 0 0

RFL1N20L

Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET

DIN-46228 T3

Abstract: 1793750000
Contextual Info: Data Sheet • PCB Products PCB Connectors 1 8 . 3 W h NE Pitc – T M S SL SL-SMT 3.81/SL 3.81 BL 3.81 The 3.81 mm 0.51 inch pitch connector system extends the selection of connectors available to the designer in the practical 3 mm range. The pin headers are available

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

E60693

Contextual Info: Data Sheet • PCB Products LSF-SMT 135° PCB terminal block for lead-free soldering processes with innovative connection technology: ” P u s h I n“ The ”Push In“ direct-connection terminal connector system ensures short wiring times: reductions of up to 50 % for the ”connect conductor“ workstep compared to leaf-spring

Contextual Info: Data Sheet • PCB Products LSF-SMT 135° PCB terminal block for lead-free soldering processes with innovative connection technology: ” P u s h I n“ The ”Push In“ direct-connection terminal connector system ensures short wiring times: reductions of up to 50 % for the ”connect conductor“ workstep compared to leaf-spring

Richey

Abstract: Richey rmd 8X16 BN2845M2.5X12
Contextual Info: RMD Series RICHEY Axial Lead Polar Industrial, Automotive, Audio, Video, Lighting Low voltage • • SPECIFICATIONS Item Characteristics Operating Temperature Range ºC -40ºC + 85ºC Rated Voltage Range (V) 3V ~ 100V Rated Capacitance Range 0.1 µF ~ 40000 µF

SK121

Abstract: control light intensity using SCR EL12 SP4415 SP4415CN SCHEMATIC circuit scr H-Bridge Nippon capacitors
Contextual Info: SP4415 SIGNAL PROCESSING EXCELLENCE Electroluminescent Lamp Driver with Selectable Level Outputs • ■ ■ ■ ■ 2.2 V- 3.6 V Battery Operation 50 nA Maximum Standby Current Four Level Selectable Output High Voltage Output 140VPP Typical High Impedance Clock Signal

ACT 6040

Abstract: CH5070AS-203K-006 gunze Nippon capacitors SCHEMATIC circuit scr oscillator
Contextual Info: SP4415 SIGNAL PROCESSING EXCELLENCE Electroluminescent Lamp Driver with Selectable Level Outputs • ■ ■ ■ ■ 2.2 V- 3.3 V Battery Operation 50 nA Maximum Standby Current Four Level Selectable Output High Voltage Output 140VPP Typical High Impedance Clock Signal

SCHEMATIC circuit scr H-Bridge

Abstract: EL12 SP4415 SP4415CN rm 609 Nippon capacitors Sankyo STK-0050 Sankyo Shoji sk-80
Contextual Info: Back SP4415 Electroluminescent Lamp Driver with Selectable Level Outputs • ■ ■ ■ ■ 2.2 V- 3.3 V Battery Operation 50 nA Maximum Standby Current Four Level Selectable Output High Voltage Output 140Vpp Typical High Impedance Clock Signal Conditioner

schematic diagram dc-ac inverter using scr

Abstract: schematic diagram dc-ac inverter ABE 407 SCHEMATIC circuit scr H-Bridge schematic sumida backlight inverter schematic hitachi lcd power supply unit Sankyo Shoji hitachi lcd backlight schematic SK 9080 nec lcd inverter schematic
Contextual Info: SP4427 Electroluminescent Lamp Driver Dual Oscillators with High Drive Capability • DC to AC Inverter for EL Backlit Display Panels ■ Low Voltage, Single Battery Operation vbat > 1.1 Vdc ■ Dual Oscillator Operation for Application Flexibility ■ Low Current Standby Mode