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    IRF9630 Search Results

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    IRF9630 Price and Stock

    Vishay Siliconix IRF9630SPBF

    MOSFET P-CH 200V 6.5A D2PAK
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    DigiKey IRF9630SPBF Tube 3,550 1
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    ComSIT USA IRF9630SPBF 200
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    Vishay Siliconix IRF9630PBF

    MOSFET P-CH 200V 6.5A TO220AB
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    DigiKey IRF9630PBF Tube 2,205 1
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    RS IRF9630PBF Bulk 1,000
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    Chip 1 Exchange IRF9630PBF 12,814
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    Vishay Siliconix IRF9630PBF-BE3

    MOSFET P-CH 200V 6.5A TO220AB
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    DigiKey IRF9630PBF-BE3 Tube 1,801 1
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    Vishay Siliconix IRF9630STRLPBF

    MOSFET P-CH 200V 6.5A D2PAK
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    DigiKey IRF9630STRLPBF Digi-Reel 1,241 1
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    IRF9630STRLPBF Cut Tape 1,241 1
    • 1 $3.6
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    IRF9630STRLPBF Reel 800 800
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    Quest Components IRF9630STRLPBF 15
    • 1 $2.1
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    IRF9630STRLPBF 15
    • 1 $2.1
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    New Advantage Corporation IRF9630STRLPBF 12,000 1
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    Vishay Siliconix IRF9630

    MOSFET P-CH 200V 6.5A TO220AB
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    IRF9630 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9630 Fairchild Semiconductor 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Original PDF
    IRF9630 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF9630 Intersil 6.5A, 200V, 0.800 ?, P-Channel Power MOSFETs Original PDF
    IRF9630 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9630 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 6.5A TO-220AB Original PDF
    IRF9630 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9630 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) Scan PDF
    IRF9630 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9630 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRF9630 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -200V. -6.5A, Pkg Style TO-220AB Scan PDF
    IRF9630 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF9630 Motorola Switchmode Datasheet Scan PDF
    IRF9630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9630 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9630 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRF9630 Unknown FET Data Book Scan PDF
    IRF9630 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9630 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9630 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9630 Samsung Electronics 200 V, P-channel power MOSFET Scan PDF

    IRF9630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: IRF9630S SiHF9630S
    Text: IRF9630S_RC, SiHF9630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9630S SiHF9630S AN609, 22-Mar-10 AN609

    IRF530S

    Abstract: No abstract text available
    Text: PD- 95771 IRF9630SPbF • Lead-Free Document Number: 91085 06/06/05 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085


    Original     		PDF IRF9630SPbF 12-Mar-07 IRF530S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94958 IRF9630PbF • Lead-Free 1 IRF9630PbF 2 IRF9630PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRF9630PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel


    Original     		PDF IRF9630S, SiHF9630S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9630

    Abstract: SiHF9630 SiHF9630-E3
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9630 SiHF9630-E3

    IRF9630S

    Abstract: SiHF9630S SiHF9630S-E3
    Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630S, SiHF9630S O-263) 18-Jul-08 IRF9630S SiHF9630S-E3

    IRF9630

    Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF9630, RF1S9630SM TA17512. TB334 IRF9630 O-220AB O-263AB IRF9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334

    IRF9630

    Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		PDF IRF9630, RF1S9630SM TA17512. IRF9630 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334

    9571

    Abstract: AN609 IRF9630 SiHF9630
    Text: IRF9630_RC, SiHF9630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9630 SiHF9630 AN609, 22-Mar-10 9571 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF530S

    Abstract: No abstract text available
    Text: PD- 95771 IRF9630SPbF • Lead-Free Document Number: 91085 06/06/05 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085


    Original     		PDF IRF9630SPbF 08-Mar-07 IRF530S

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF9630S

    Abstract: SiHF9630S SiHF9630S-E3
    Text: IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9630S, SiHF9630S O-263) 2002/95/EC 11-Mar-11 IRF9630S SiHF9630S-E3

    irf9630

    Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
    Text: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 IRF9630/IR FP9230/ IRF9230 IRF9631 /IRFP9231 IRF9231 IRF9632/IRFP9232/ irf9630 IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9632

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF9630, RF1S9630SM -200V, -200V

    1RF9630

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0Q12277 30b « S M G K IRF9630/9631 /9632/9633 IRFP9230/9231/9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • ■ • • • TO-220 Lower R 0s ON Improved inductive ru gge d n e ss Fast sw itching tim es


    OCR Scan     		PDF 0Q12277 IRF9630/9631 IRFP9230/9231/9232/9233 O-220 IRF9630/9631/9632/9633 IRF9630/IRFP9230 IRF9631 /IRFP9231 IRF9632/IRFP9232 IRF9633/IRFP9233 1RF9630

    diode 9232

    Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
    Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on


    OCR Scan     		PDF IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 D0QS417 IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963 IRF/IRFP9232, IRF9632 diode 9232 1RF9630 IRFP9230 9232

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan     		PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    irf9630

    Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631
    Text: P-CHANNEL POWER MOSFETS IRF9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF9630/9631 IRF9630 IRF9631 IRF9632 F9633 MOSFET IRF9630 IRF9630 mosfet

    MOSFET IRF9630

    Abstract: IRF 1630 IRF9630 IRF9631 IRP9 IRF9632 IRFS632 irf98 transistor IRF 630 IRF9633
    Text: Rugged Power M O SFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -2 0 0 V fDs on = 0.8 f i and 1.2 0 TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF9630, IRF9631, IRF9632, IRF9633 IRF9632 IRF9633 B2CS-4330S 92CS-43279 MOSFET IRF9630 IRF 1630 IRF9630 IRF9631 IRP9 IRFS632 irf98 transistor IRF 630

    MOSFET IRF9630

    Abstract: fet IRF9630
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF9630 P o w e r Field E ffe c t T ra n sisto rs P-Channel Enhancement-Mode Silicon Gate TMOS T h is T M O S Po w er F E T is d esig ned fo r high vo ltag e, high speed p o w er sw itch in g ap plicatio n s such as s w itc h ­


    OCR Scan     		PDF IRF9630 21A-04 O-220AB MOSFET IRF9630 fet IRF9630

    IRF9630

    Abstract: MOSFET IRF9630
    Text: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description


    OCR Scan     		PDF IRF9630 -200V O-220 T0-220 IRF9630 MOSFET IRF9630