FOR DQ 2816-A 250 Search Results

intel 2816A

Abstract: intel 2816 eeprom for DQ 2816-A 250 2816A 2816A eeprom INTEL D 2816 intel 2816 eeprom 2816A vpp eeprom 2816A ic rom 2816
Contextual Info: ir r t e T PffigUM DNAO ftf 2816A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation Fast Read Access Time: —2816A-2, 200ns —2816A, 250ns -2816A-3, 350ns —2816A-4, 450ns HMOS*-E Flotox Cell Design Minimum Endurance of 10,000 Erase/Write Cycles per Byte

Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.

Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Description Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA)

DDR2-667

Abstract: ELPIDA 1216 DDR2-700 ELPIDA DDR User
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.

ELPIDA DDR User

Abstract: EDE2516
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA)

Contextual Info: 240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 4Gb B-die HMT451R7BFR8C HMT41GR7BFR8C HMT41GR7BFR4C HMT42GR7BFR4C HMT84GR7BMR4C *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /May. 2014 1 Revision History

Contextual Info: NT2GC64B C H4C0PS / NT4GC64B(C)88C0NS / NT8GC64B(C)8HC0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600/1866 256Mx16 and 512Mx8 SDRAM C-Die Features •Performance:

DDR2-667

Abstract: ELPIDA 1216 ELPIDA DDR User
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package.

ELPIDA DDR User

Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)

Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package.

NT5TU64M8BE

Abstract: PC2-5300 PC2-6400 7F7F7F0B00000000
Contextual Info: NT2GT72U4NB0BV / NT2GT72U4NB1BV NT512T72U89B0BV / NT1GT72U4PB0BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die B Features • Differential clock inputs

NT5TU64M8BE

Abstract: PC2-5300 PC2-6400 NT1GT72U4PB0BV-3C DDR2 DIMM 240 pinout
Contextual Info: NT2GT72U4NB0BV / NT2GT72U4NB1BV NT512T72U89B0BV / NT1GT72U4PB0BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die B Features • Differential clock inputs

Contextual Info: 240pin DDR3 SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A *Hynix Semiconductor reserves the right to change products or specifications without notice.

Contextual Info: APCPCWM_4828539:WP_0000005WP_000000 APCPCWM_4828539:WP_0000005WP_0000005 240pin DDR3 SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A *Hynix Semiconductor reserves the right to change products or specifications without notice.

Contextual Info: 1 9 9 9 A N N U A L R E P O “Cypress’s priority for 1999 is to grow faster than the [semiconductor] industry.” T.J. Rodgers, 1998 Annual Report * *Analysts’ estimate of 2000 Cypress revenue; does not include IC Works revenue prior to IC Works acquisition.

MUX2T01

Abstract: MUX4T01
Contextual Info: •JUL J Ü 9 S3- GEC PLES S EY J U N E 1993 S E M I C O N D U C T O R S DS3820 - 1.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density

db34

Abstract: D-A54 DB26 DB52 BE1210 pc800 dram samsung T45 to DB9 RR10a da45
Contextual Info: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own

Outline T44

Abstract: DB26
Contextual Info: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own

EP2C35F672

Abstract: 26075 EP2C20F256 TMS 3617 PQFP16 ic 4017 pin configuration 2864 rom 3844 b so 8 EP2C5 EP2C15A
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

EP2C8F256 package

Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

bga 896

Abstract: TSMC 90nm sram EP2C50F484 APU 2471
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.

pin configuration of 7496 IC

Abstract: tms 3617 Transistor TT 2246 4174 logic hex D type flip-flop tt 2246 data sheet ic 4017 Ic D 1708 ag BLOCK DIAGRAM DESCRIPTION of IC 4017 WITH 16 PINS EP2C20F256 EP2C35F672
Contextual Info: Cyclone II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CII5V1-3.3 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and

NTC THERMISTORS nd06

Abstract: ND06 Ka 2535 data sheet mc 7715 NC20 ls 7456 ntc 1,0 0914 ka 2281 0716 NTC 503 3950
Contextual Info: NTC Disc Thermistors General Purpose: ND 06 Professional: NV 06 These multi-purpose thermistors can be used for temperature control, compensation or measurement. This standard product is available in large quantities and with a short delivery time. GENERAL PURPOSE

D 1709 N 20

Abstract: NC20 BA 5991 NM06 MC 4584
Contextual Info: NTC Thermistors Insulated Metal Case NM 06 Especially designed for mounting on a chassis or screwing on a plate, these thermistors provide an excellent thermal contact and ensure a good accuracy of measurement and alarm control for different types of equipment.