FOR IR IGBT DIE Search Results

for IR IGBT die

Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
Contextual Info: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient

Contextual Info: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for

IRGC4055B

Contextual Info: PD - 97045A IRGC4055B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for

168802

Contextual Info: Data Sheet, Doc. No. 5SYA 1688-02 11 05 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1689-02 11 05 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-02 11 05 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1689-03 04 14 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-03 04 14 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

5Sya

Abstract: 12E17
Contextual Info: Data Sheet, Doc. No. 5SYA 1691-02 11 05 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1688-03 04 14 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

1691-03

Contextual Info: Data Sheet, Doc. No. 5SYA 1691-03 04 14 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter

Contextual Info: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

MJ10050

Contextual Info: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

12E1200

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

12F1200

Contextual Info: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

IGBT power loss

Abstract: three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG
Contextual Info: A New Low-Cost Flexible IGBT Inverter Power Module for Appliance Applications Mario Battello, Neeraj Keskar, Peter Wood, Mor Hezi, Alberto Guerra International Rectifier Appliance & Consumer Group, El Segundo CA as presented at PCIM China, March 2003 Abstract- Power modules for inverterized motor drive

600V igbt dc to dc boost converter

Abstract: IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET
Contextual Info: INTERNATIONAL RECTIFIER CORPORATION 100 North Sepulveda Boulevard, 8th Floor, El Segundo, California 90245 Phone: 310-726-8622 Fax: 310-252-7167 WARP SpeedTM IGBTs - Fast Enough To Replace Power MOSFETs in Switching Power Supplies at over 100 kHz Chris Ambarian - Director of Switch Strategic Marketing Chesley Chao - Strategic Marketing