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    IRG7CH Search Results

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    IRG7CH Price and Stock

    Infineon Technologies AG IRG7CH35UED

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH73K10EF

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH73K10EF-R

    IGBT 1200V ULTRA FAST DIE
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    Infineon Technologies AG IRG7CH44K10EF

    Trans IGBT Chip N-CH 1200V 25A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH44K10EF)
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    Avnet Americas IRG7CH44K10EF Waffle Pack 111 Weeks 1,489
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    Infineon Technologies AG IRG7CH50K10EF

    Trans IGBT Chip N-CH 1200V 35A Die on Film/Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IRG7CH50K10EF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRG7CH50K10EF Waffle Pack 111 Weeks 1,100
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    Find more IRG7CH price and stock on Findchips.com

    IRG7CH Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7CH11K10EF
    		Infineon Technologies IGBT 1200V DIE Original PDF
    IRG7CH20K10EF
    		Infineon Technologies IGBT 1200V DIE Original PDF
    IRG7CH23K10EF
    		Infineon Technologies IGBT 1200V DIE Original PDF
    IRG7CH28UED
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH28UEF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH30K10EF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH35UED
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH35UEF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH37K10EF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH42UED
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH42UEF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH44K10EF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH46UED
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH46UEF
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH50K10EF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRG7CH50UED
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH50UEF
    		Infineon Technologies IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH54K10EF-R
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF
    IRG7CH73K10EF-R
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V ULTRA FAST DIE Original PDF

    IRG7CH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH54K10B PDF

    Contextual Info: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution


    Original     		IRG7CH73K10B-R PDF

    IRG7CH44K10B

    Abstract: IRG7CH44
    Contextual Info: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		6270A IRG7CH44K10B IRG7CH44K10B IRG7CH44 PDF

    IRG7CH50

    Abstract: Inverters el tape IRG7CH50UB
    Contextual Info: PD - 97628 IRG7CH50UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		IRG7CH50UB IRG7CH50 Inverters el tape IRG7CH50UB PDF

    Contextual Info: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		IRG7CH37K10EF PDF

    IRG7CH81K10B

    Abstract: IRG7CH81K
    Contextual Info: PD - 97423 IRG7CH81K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH81K10B IRG7CH81K10B IRG7CH81K PDF

    irg7ph35

    Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
    Contextual Info: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original     		IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD PDF

    Contextual Info: PD - 97430 IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH73K10B 1200e PDF

    Contextual Info: PD - 97664A IRG7CH37K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		7664A IRG7CH37K10B PDF

    Contextual Info: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH75K10B PDF

    IRG7CH54K10B

    Abstract: IRG7CH54
    Contextual Info: PD - 96271A IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		6271A IRG7CH54K10B IRG7CH54K10B IRG7CH54 PDF

    IRG7CH75K10B

    Abstract: IRG7CH MIL-HDBK-263
    Contextual Info: PD - 96272A IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		6272A IRG7CH75K10B IRG7CH75K10B IRG7CH MIL-HDBK-263 PDF

    IRG7CH73K10

    Abstract: IRG7CH73K10B MIL-HDBK-263
    Contextual Info: PD - 97430A IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		7430A IRG7CH73K10B IRG7CH73K10 IRG7CH73K10B MIL-HDBK-263 PDF

    Contextual Info: PD - 96270 IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		IRG7CH44K10B PDF

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Contextual Info: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH PDF