FORD GAA Search Results

Contextual Info: Skin ford M i erotleviees Product Description SLN-443 Stanford M icrodevices’ SLN-443 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount SOT-143 plastic package. Hetero­ junction technology is utilized for ultra-linear performance

IM 337

Contextual Info: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0598 Stanford M icrodevices’ SHF-0598 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost ceram icmount ceram ic package. HFET technology improves breakdown voltage for high drain voltage operation. Its

MN1Y

Abstract: 10S120
Contextual Info: H Siali ford M icrodevices Product Description SLN-543 Stanford M icrodevices’ SLN-543 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface mount SOT-143 plastic package. Hetero­ junction technology is utilized for ultra-linear performance

ic LM 386

Abstract: g1760
Contextual Info: Skin ford M ierotleviees Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth

FET transistors with s-parameters

Contextual Info: H S iali ford M icro d ev ices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its

MB522

Contextual Info: Stati ford M i crudev ices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage|

NT 407 F transistor

Abstract: NT 407 F power transistor SLN-407
Contextual Info: H Siali ford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc­ tion technology is utilized for ultra-linear performance to 2.5

Contextual Info: H Siali ford M icrodevices Product Description SLN-376 Stanford M icrodevices’ SLN-376 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 70 mil (1.8mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth

Contextual Info: :fp| Sian ford M ic raclev ices SSW-307 Product Description Stanford M icrodevices’ SSW -307 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-3 GHz Low Cost

Contextual Info: H Siali ford M icrodevices SCA-7 Product Description Stanford M icrodevices’ SCA-7 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ m ance up to 3 GHz. The heterojunction increases break­

78s12

Contextual Info: S tati ford M i cru d ev ices Product Description SCA-14 Stanford M icrodevices’ SC A -14 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases

lm 293 iz 5

Abstract: T-522A shf0289 t 522
Contextual Info: H Siali ford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while minimizing Schottky

Contextual Info: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: CPI Sian ford M Ìcr udev ices Product Description SHF-0198 Stanford M icrodevices’ SHF-0198 series is a high perfor­ m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost stripiine-m ount ceram ic package. HFET technol­ ogy improves breakdown voltage while m inimizing Schottky j

SHF 205

Contextual Info: r= c~i S u n iord Miuodk? vices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

ford

Abstract: b73an IP2525 L4503 L4504 L4506 L4509 l4s03 B73a
Contextual Info: 3 6 6 7 3 2 0 F O R D AEROSP. 97D 004^n A E R Ö N U T R O N IC 17 >F0RD AEROSP-, AERONUTRONIC ord Aerospace & , r~ - H W i~ J>eT B 3t.fc.7330 G000M5G S PHIO O TO M IXER/ ‘ ^ » ^^C o m m u n icatio n s Corporation D PHOTODETECTOR SILICON DIODES ; /j^ Ë L E O T R O - O P T IC A L ÏD E V IC E S

philco transistors

Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Contextual Info: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.

Contextual Info: 2 THIS CO co DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 FX R 1G H T S R E S E RV E D. REV 1SIONS DIST P LTR DESCRIPTION REV PER ECO 08-009600

Contextual Info: IS Stanford Microdevices Product Description SNA-287 Stanford Microdevices SNA-287 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 15dB of gain and +14dBm of P1dB power when biased at 50mA and 4V.

LM 344 IC

Contextual Info: SCA-11 Product Description Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This am plifier is internally m atched with typical VSW R of

SEM 2006 samsung

Abstract: chrysler ccd toyota engineering standard SEM 2006 7segments opto 1010 toyota standard ts NISSAN WHIRLPOOL LED Sign Board Diagram
Contextual Info: AMERICAN AMERICAN OPTOOPTO PLUSPLUS 2010 Company Profile 1206 E. Lexington Ave., Pomona CA 91766 Tel:909 Tel:909-465-0080 465 0080 Fax: 909-465-0130 909 465 0130 www.aopled.com email: info@aopled.com AMERICAN AMERICAN OPTOOPTO PLUSPLUS AMERICAN AMERICAN OPTOOPTO

Contextual Info: Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.

SPF 455

Contextual Info: IStanford Mfcrodevieo Product Description SPF-1576 Stanford M icrodevices’ SPF-1576 is a PHEMT gallium arsenide FET housed in a low cost, stripline m ount ceram ic package. These devices are ideal for use as the first stage of ultra low noise cascades operating in the

Contextual Info: SCA-13 Product Description Stanford M icrodevices’ SCA-13 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ m ance up to 3 GHz. The heterojunction increases break­