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    FORMOSA MICROSEMI Search Results

    FORMOSA MICROSEMI Result Highlights (1)

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    HA3905- Coilcraft Inc Transformer, for Microsemi UC3844, SMT, RoHS Visit Coilcraft Inc

    FORMOSA MICROSEMI Datasheets Context Search

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    FMBT3904

    Abstract: Formosa MS
    Text: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : Page No. : 1/3 Formosa MS FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications. Absolute Maximum Ratings


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    PDF FMSC003 FMBT3904 FMBT3904 OT-23 UL94V-0 Formosa MS

    Microsemi Taiwan

    Abstract: No abstract text available
    Text: FORMOSA MICROSEMI CO., LTD. Formosa MS Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : 2003/1/10 Page No. : 1/3 FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications.


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    PDF FMSC003 FMBT3904 FMBT3904 OT-23 UL94V-0 Microsemi Taiwan

    FMBT3906

    Abstract: No abstract text available
    Text: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2002/12/25 Page No. : 1/3 Formosa MS FMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The FMBT3906 is designed for general purpose switching and amplifier applications.


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    PDF FMSC001 FMBT3906 FMBT3906 OT-23 UL94V-0

    Formosa MS

    Abstract: Microsemi Taiwan
    Text: Formosa MS FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2003/1/7 Page No. : 1/3 FMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The FMBT3906 is designed for general purpose switching and amplifier applications.


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    PDF FMSC001 FMBT3906 FMBT3906 OT-23 UL94V-0 Formosa MS Microsemi Taiwan

    DIODE WITH SOD CASE

    Abstract: No abstract text available
    Text: MM914 FORMOSA MICROSEMI High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed t rr= 4 ns Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Test Conditions


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    PDF MM914 DIODE WITH SOD CASE

    zener diode BZ 320

    Abstract: zener diode BZ 55 zener diode BZ 250 zener diode BZ 110 zener diode BZ 168 BZ 140 zener zener diode BZ 5.5 DIODE BZ marking HX zener diode BZ 100 AND 0.3 WATTS
    Text: Formosa MS ZM200X THRU ZM330Y 1WATT SURFACE MOUNT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY .161 4.1 .146(3.7 ) .071(1.8 ) .055(1.4 ) MECHANICAL DATA


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    PDF ZM200X ZM330Y CASE-SOD-123 25UNL 300us zener diode BZ 320 zener diode BZ 55 zener diode BZ 250 zener diode BZ 110 zener diode BZ 168 BZ 140 zener zener diode BZ 5.5 DIODE BZ marking HX zener diode BZ 100 AND 0.3 WATTS

    diode zener 3v9

    Abstract: No abstract text available
    Text: FormosaMS ZMM55C Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Power dissipation Z-current Junction temperature


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    PDF ZMM55C 300K/W 200mA ZMM55C. ZMM55A. ZMM55B. ZMM55F. diode zener 3v9

    Formosa MicroSemi

    Abstract: ZMM55A ZMM55B ZMM55C ZMM55F zener 6v2
    Text: FormosaMS ZMM55C Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25 oC Parameter Power dissipation Z-current Junction temperature


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    PDF ZMM55C RthJA300K/W 200mA Formosa MicroSemi ZMM55A ZMM55B ZMM55F zener 6v2

    1N60 diode

    Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
    Text: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


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    PDF 1N60/1N60P 1N60P 200mA 1N60 diode diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P

    Untitled

    Abstract: No abstract text available
    Text: DIO 4439 Why Diodes SASP1 final _- 09/10/2014 01:41 Page 1 WHY DIODES – SASP1 Why DIODES? Diode and Rectifier Devices A Broad Range of Diode and Rectifier Devices Offering Solutions Such as the Following: Broad Range of Through-Hole, Surface-Mount and Leadless Packages Including the Following:


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    PDF X3-DFN0603-2: A-M3/89A SMAJ10CA MMBZ27VALT1G PDLC05 DSOT0502 1SMA70AT3G SM05T1G ESD5Z12T1G SMCJ70CA

    POWER TRANSFORMER E154515

    Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
    Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD


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